Emission at 247 nm from GaN quantum wells grown by MOCVD[Metal Organic Chemical Vapor Deposition]
Conference
·
OSTI ID:20104647
Photoluminescence (PL) spectra were measured at room temperature for GaN quantum wells (QWs) with Al{sub 0.8}Ga{sub 0.2}N barriers, which were grown by atmospheric-pressure metal organic chemical vapor deposition (MOCVD). The thickness of the GaN QW layers was systematically varied from one monolayer to four monolayers. The authors clearly observed a PL peak at a wavelength as short as 247 nm (5.03 eV) from one monolayer-thick QWs. The effective confinement energy is as large as 1.63 eV.
- Research Organization:
- Univ. of Tokyo (JP)
- OSTI ID:
- 20104647
- Country of Publication:
- United States
- Language:
- English
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