Picosecond photoinduced reflectivity studies of GaN prepared by lateral epitaxial overgrowth
Conference
·
OSTI ID:20104622
The pump-probe technique has been used to perform room temperature studies of the photoinduced changes in the reflectivity {Delta}R associated with exciton and carrier dynamics in GaN prepared by lateral epitaxial overgrowth. For resonant excitation of cold excitons, the {Delta}R decay possesses a 720 ps component attributed to the free exciton lifetime in this high quality material. For electrons with small excess energy (<50 meV), the strong increase in the {Delta}R decay rate with decreasing excitation density suggests that screening of the Coulomb interaction may play an important role in the processes of carrier relaxation and exciton formation. The faster decay times at a given carrier density observed for hot (>100 meV) electron relaxation are attributed to electron-hole scattering in conjunction with the screened electron-LO phonon interaction.
- Research Organization:
- Army Research Lab., Adelphi, MD (US)
- OSTI ID:
- 20104622
- Country of Publication:
- United States
- Language:
- English
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