Comparative study of structural properties and photoluminescence in InGaN layers with a high In content
- and others
InGaN compounds have been used successfully for the fabrication of highly efficient blue, green, amber and red light emitting diodes. Rutherford backscattering and channeling spectrometry (RBS), photoluminescence (PL) spectroscopy and transmission electron microscopy (TEM) have been used to investigate macroscopic and microscopic segregation in MOCVD grown InGaN layers. The PL peak energy and In content (measured by RBS) were mapped at a large number of distinct points on the samples. An indium concentration of 40%, the highest measured in this work, corresponds to a PL peak of 710 nm, strongly suggesting that the light-emitting regions of the sample are very indium-rich compared to the average measured by RBS. Cross-sectional TEM observations show distinctive layering of the InGaN films. The TEM study further reveals that these layers consist of amorphous pyramidal contrast features with sizes of order 10 nm. The composition of these specific contrast features is shown to be In-rich compared to the nitride matrix.
- Research Organization:
- Univ. of Leuven (BE)
- OSTI ID:
- 20104608
- Country of Publication:
- United States
- Language:
- English
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