TEM study of the morphology of GaN/SiC (0001) grown at various temperatures by MBE[Transmission Electron Microscopy, Molecular Beam Epitaxy]
Conference
·
OSTI ID:20104551
GaN films grown on SiC (0001) by MBE at various substrate temperatures (600--750 C) were characterized by RHEED, STM, x-ray diffraction, AFM and TEM. This work focuses on the TEM analysis of the films' features, such as stacking faults and dislocations, which are related to the substrate temperature. There are several basal plane stacking faults in the form of cubic inclusions for samples grown at low temperatures compared to those grown at high temperatures. The dislocation density is greatest for the film grown at 600 C, and it steadily decreases with increasing growth temperatures. Despite the presence of various defects, x-ray analysis shows that the GaN films are of high quality. The double crystal rocking curve full width at half maximum (FWHM) for the GaN (0002) peak is less than 2 arc-minutes for all of the films they measured and it decreases with increasing growth temperature.
- Research Organization:
- Univ. of Maryland, College Park, MD (US)
- Sponsoring Organization:
- National Science Foundation; Office of Naval Research
- OSTI ID:
- 20104551
- Country of Publication:
- United States
- Language:
- English
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Thu Oct 31 23:00:00 EST 1996
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OSTI ID:394945