Structure and morphology characters of GaN grown by ECR-MBE using hydrogen-nitrogen mixed gas plasma[Electron Cyclotron Resonance-Molecular Beam Epitaxy]
Conference
·
OSTI ID:20104547
GaN growth by electron-cyclotron-resonance plasma-excited molecular beam epitaxy using hydrogen-nitrogen mixed gas plasma were carried out on GaN templates with a different polar-surface. Structure and surface morphology of the GaN layers were characterized using transmission electron microscopy. The GaN layer grown with hydrogen on N-polar template showed a relatively flat morphology including hillocks. Columnar domain existed in the center of the hillock, which might be attributed to the existence of tiny inversion domain with Ga-polarity. On the other hand, columnar structure was formed in the GaN layer grown with hydrogen on Ga-polar template.
- Research Organization:
- Ritsumeikan Univ., Kusatsu (JP)
- Sponsoring Organization:
- Japanese Foundation for Promotion of Material Science and Technology; Japanese Ministry of Education, Science, Sports and Culture
- OSTI ID:
- 20104547
- Country of Publication:
- United States
- Language:
- English
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