Chemical vapor deposition of hexagonal boron nitride films in the reduced pressure
Journal Article
·
· Materials Research Bulletin
Hexagonal boron nitride (h-BN) films were deposited onto a graphite substrate in reduced pressure by reacting ammonia and boron tribromide at 800--1,200 C. The growth rate of h-BN films was dependent on the substrate temperature and the total pressures. The growth rate increased with increasing the substrate temperature at the pressure of 2 kPa, while it showed a maximum value at the pressures of 4 and 8 kPa. The temperature at which the maximum growth rate occurs decreased with increasing total pressure. With increasing the substrate temperature and total pressure, the apparent grain size increased and the surface morphology showed a rough, cauliflower-like structure.
- Research Organization:
- Taegu Health Coll. (KR)
- OSTI ID:
- 20075660
- Journal Information:
- Materials Research Bulletin, Journal Name: Materials Research Bulletin Journal Issue: 14-15 Vol. 34; ISSN MRBUAC; ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
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