Ultra-wide Bandgap AlGaN Alloys for Power Diodes and Transistors (invited).

Conference · Sat Oct 01 00:00:00 EDT 2022

DOI:https://doi.org/10.2172/2005348· OSTI ID:2005348

Allerman, Andrew; Crawford, Mary; Armstrong, Andrew; Binder, Andrew; Yates, Luke; Kaplar, Robert; Steinfeldt, Jeffrey Allen; Smith, Michael

Abstract not provided.

• Research Organization: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE National Nuclear Security Administration (NNSA)
• DOE Contract Number: NA0003525
• OSTI ID: 2005348
• Report Number(s): SAND2022-13635C; 710525
• Resource Relation: Conference: Proposed for presentation at the International Workshop on Nitride Semiconductors (IWN 2022) held October 9-14, 2022 in Berlin, Germany
• Country of Publication: United States
• Language: English