Ultra-Wide Bandgap Al-Rich AlGaN Alloys for Power Diodes and Transistors (invited).

Conference · Sun Dec 01 00:00:00 EST 2019

OSTI ID:1643447

Allerman, Andrew A.; Allerman, Andrew A.; Allerman, Andrew A.; Allerman, Andrew A.; Crawford, Mary H.; Crawford, Mary H.; Armstrong, Andrew; Armstrong, Andrew; Pickrell, Gregory; Pickrell, Gregory; Dickerson, Jeramy Ray; Dickerson, Jeramy Ray; Kaplar, Robert; Kaplar, Robert; Binder, Andrew; Binder, Andrew; Smith, Michael L.; Smith, Michael L.; Abate, Vincent M.; Abate, Vincent M.

Abstract not provided.

• Research Organization: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE National Nuclear Security Administration (NNSA)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 1643447
• Report Number(s): SAND2019-14981C; 682278
• Resource Relation: Conference: Proposed for presentation at the 5th symposium in MRS-J (Materials Research Meeting-Japan) held December 10-14, 2019 in Yokohama, Japan.
• Country of Publication: United States
• Language: English