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U.S. Department of Energy
Office of Scientific and Technical Information

Ultra-Wide Bandgap Al-Rich AlGaN Alloys for Power Diodes and Transistors (invited).

Conference ·
OSTI ID:1643447

Abstract not provided.

Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
1643447
Report Number(s):
SAND2019-14981C; 682278
Country of Publication:
United States
Language:
English

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