Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

SRAM Multi-Cell Upset Vulnerability at the 5-nm FinFET Node.

Conference ·
OSTI ID:2004056

Abstract not provided.

Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
DoD
DOE Contract Number:
NA0003525
OSTI ID:
2004056
Report Number(s):
SAND2022-9599C; 708259
Country of Publication:
United States
Language:
English

Similar Records

Single Event Upset Response of 12L FinFET Digital Circuits.
Conference · Sun May 01 00:00:00 EDT 2022 · OSTI ID:2003206

Characterizing SRAM Single Event Upset in Terms of Single and Double Node Charge Collection.
Conference · Thu Jan 31 23:00:00 EST 2008 · OSTI ID:1146377

Soft error characterization of D-FFs at the 5-nm bulk FinFET technology for the terrestrial environment.
Conference · Mon Jan 31 23:00:00 EST 2022 · OSTI ID:2001731

Related Subjects