Control of ion energy and angular distributions using voltage waveform

Conference · Thu Jul 01 04:00:00 EDT 1999

OSTI ID:20034253

Rauf, S

A number of plasma-aided microelectronics manufacturing processes sensitively depend on the ion characteristics at the substrate, in particular the ion energy (IEDF) and angular (IADF) distribution functions. The outcome of these processes can be much more precisely controlled if one has direct control over the IEDFs and IADFs. Past studies have explored the influence of rb bias voltage amplitude and frequency, inductive power deposition and gas pressure on the ion characteristics at the substrate. The factor that influences the ion dynamics most is however the time-dependent sheath voltage and, as demonstrated in this paper, sheath voltage can be accurately controlled using the rf bias voltage waveform. In this paper, the authors computationally examine the influence of the rf bias voltage waveform on the IEDFs and IADFs at the substrate in an inductively coupled plasma (ICP) reactor. This study has been conducted using a coupled set of the Hybrid Plasma Equipment Model (HPEM) and a circuit model, and the Plasma Chemistry Monte Carlo Simulation (PCMCS).

• Research Organization: Motorola, Austin, TX (US)
• OSTI ID: 20034253
• Country of Publication: United States
• Language: English

Related Subjects

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATION
42 ENGINEERING
CHEMICAL REACTORS
ELECTRIC POTENTIAL
MANUFACTURING
MICROELECTRONIC CIRCUITS
PLASMA
PLASMA SHEATH
PLASMA SIMULATION
PROCESS CONTROL
SUBSTRATES