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Density Dependence of the Excitation Gap in Si/SiGe Bilayers [Slides]

Conference ·
DOI:https://doi.org/10.2172/2001982· OSTI ID:2001982
 [1];  [1];  [2];  [2];  [2];  [3];  [2];  [2];  [3];  [1]
  1. Univ. of Florida, Gainesville, FL (United States)
  2. National Taiwan Univ., Taipei (Taiwan)
  3. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
+ Show Author Affiliations

Abstract not provided.

Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE Office of Science (SC); USDOE National Nuclear Security Administration (NNSA); National Science Foundation (NSF)
DOE Contract Number:
NA0003525
OSTI ID:
2001982
Report Number(s):
SAND2022--2791C; 704040
Country of Publication:
United States
Language:
English

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Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY