Corrosion, passivation, and the effect of water addition on an n-GaAs(100)/methanol photoelectrochemical cell
A combination of picosecond photoluminescence and electrochemical studies reveals information about the GaAs/methanol interface. The electrochemistry occurring at the solid-nonaqueous liquid junction is found to have a strong influence on the observed photoluminescence as seen by photoluminescence vs voltage (PL-V) scans and by trends in the time-resolved photoluminescence decays. The effect of corrosion of the cell on the PL-V profile is examined in detail. It is found that the inclusion of the redox couple gives some protection from corrosion, but the addition of a small amount of water to the nonaqueous cell gives even more. Further water additions lead the cell back to a sate that is conducive to corrosion and eventually leads to Fermi level pinning of the GaAs.
- Research Organization:
- Univ. of Oregon, Eugene, OR (US)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- FG06-86ER45273
- OSTI ID:
- 20017535
- Journal Information:
- Journal of Physical Chemistry B: Materials, Surfaces, Interfaces, amp Biophysical, Vol. 104, Issue 7; Other Information: PBD: 24 Feb 2000; ISSN 1089-5647
- Country of Publication:
- United States
- Language:
- English
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