MOVPE grown Ga{sub 1{minus}x}In{sub x}As solar cells for GaInP/GaInAs tandem applications

Journal Article · Sat Jan 01 00:00:00 EST 2000 · Journal of Electronic Materials

DOI:https://doi.org/10.1007/s11664-000-0092-6· OSTI ID:20015388

Dimroth, F; Lanyi, P; Schubert, U; Bett, A W

Lattice-mismatched Ga{sub 1{minus}x}In{sub x}As solar cells with an absorption edge between 900 and 1,150 nm have been grown on GaAs substrates. Different graded Ga{sub 1{minus}x}In{sub x}As buffer layers and solar cell structures were evaluated to achieve a good electrical performance of the device. External quantum efficiencies comparable to the best GaAs solar cells were measured. The best 1 cm{sup 2} cell with a bandgap energy of 1.18 eV has an efficient of 22.6% at AM1.5g and a short circuit current density of 36.4 mA/cm{sup 2}. To the authors knowledge, this is the highest reported efficiency for a Ga{sub 0.83}In{sub 0.17}As solar cell.

• Research Organization: Fraunhofer Inst. for Solar Energy Systems, Freiburg (DE); Freiburg Materials Research Center (DE)
• OSTI ID: 20015388
• Journal Information: Journal of Electronic Materials, Vol. 29, Issue 1; Conference: 5th Biennial Workshop on Organometallic Vapor Phase Epitaxy, Ponte Vedra Beach, Fl (US), 05/23/1999--05/27/1999; Other Information: PBD: Jan 2000; ISSN 0361-5235
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
VAPOR PHASE EPITAXY
GALLIUM ARSENIDE SOLAR CELLS
SUBSTRATES
ELECTRICAL PROPERTIES
QUANTUM EFFICIENCY
INDIUM ARSENIDES