The Hall mobility and its relationship with persistent photoconductivity of undoped GaN
Journal Article
·
· Journal of Electronic Materials
Temperature-variable Hall effect measurement have been used to investigate the electrical properties of undoped GaN, which have the electron densities on the order of mid-10{sup 16} cm{sup {minus}3} and a Hall mobility varying from < 50 cm{sup 2}/sV to > 500 cm{sup 2}/sV. The authors found that very strong ionized impurity scattering limits the Hall mobility of GaN. Illumination even at 77 K has very little effect on the electron density but can lead to a noticeable persistent increase of the Hall mobility. The induced persistent photoconductivity (PPC) effect is therefore related to the Hall mobility through intrinsic electrically active defects. The properties of those defects were further investigated by monitoring a transient change of resistivity after removal of illumination at different temperatures. It reveals that the recapturing process of excited electrons into illumination-neutralized defects is the mechanism responsible for the PPC effect of undoped GaN.
- Research Organization:
- Inst. of Materials Research and Engineering (SG)
- OSTI ID:
- 20015387
- Journal Information:
- Journal of Electronic Materials, Journal Name: Journal of Electronic Materials Journal Issue: 1 Vol. 29; ISSN JECMA5; ISSN 0361-5235
- Country of Publication:
- United States
- Language:
- English
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