Silicon self-interstitial clusters
Conference
·
OSTI ID:20015011
A tight-binding molecular dynamics investigation on the structure and energetics of self-interstitial clusters in silicon is presented. The authors discuss how a small number of self-interstitial atoms give rise to the formation of tetrahedrally-shaped clusters, while a larger number of defects exhibit a self-organization mechanism driving the system to form rod-like defects.
- Research Organization:
- INFM, Milano (IT)
- OSTI ID:
- 20015011
- Country of Publication:
- United States
- Language:
- English
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