A 5 nm nitrided gate oxide for 0.25 {micro}m SOI CMOS technologies

Journal Article · Tue Nov 30 23:00:00 EST 1999 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers)

DOI:https://doi.org/10.1109/23.819160· OSTI ID:20014747

Liu, S T; Fechner, P; Balster, S ^[1]

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1. and others

Hot carrier lifetime, gate oxide integrity, and radiation response of a 5 nm nitrided gate oxide were evaluated for 0.25 {micro}m SOI CMOS devices intended for use in 2.5V applications and high radiation environments. The devices were fabricated in a new SOI substrate called UNIBOND-170. It is found that the DC hot electron lifetime of the devices exceed 10 years at the operating voltage. Good gate oxide integrity and radiation hardening up to 1Mrad are shown to make this technology promising for radiation-hard ULSI applications.

• Research Organization: Honeywell Solid State Electronics Center, Plymouth, MN (US)
• OSTI ID: 20014747
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers) Journal Issue: 6Pt1 Vol. 46; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
CARRIER LIFETIME
CHARGE CARRIERS
DIELECTRIC MATERIALS
FABRICATION
INTEGRATED CIRCUITS
PHYSICAL RADIATION EFFECTS
RESPONSE FUNCTIONS
SEMICONDUCTOR DEVICES