Study of dose effects on IGBT-type devices subjected to gamma irradiation

Journal Article · Wed Dec 01 04:00:00 EST 1999 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers)

DOI:https://doi.org/10.1109/23.819138· OSTI ID:20014727

Marceau, M; Brisset, C; Da Costa, M

In the nuclear power industry, speed control has become a mandatory requirement for induction motors used in the precision handling of dangerous substances. Because of this trend, the control systems of such actuators are now being exposed in service to neutrons and gamma radiation. Use of insulated gate bipolar-type transistors in power stage amplifiers has likewise become unavoidable, since IGBTs ensure better conduction and are less expensive than MOS (metal oxide semiconductor) transistors. As no hardened IGBTs are available on the market, it is necessary to study the radiation responses of the COTS versions of these products. This document describes the characterization tests performed on an IGBT transistor, International Rectifier model IRGP45OUD2. It also provides an analysis of IGBT behavior, using an electrical model and a PSPICE simulator.

• Research Organization: LETI CE/S, Gif sur Yvette (FR)
• OSTI ID: 20014727
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers) Journal Issue: 6Pt1 Vol. 46; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

22 GENERAL STUDIES OF NUCLEAR REACTORS
44 INSTRUMENTATION
GAMMA RADIATION
JUNCTION TRANSISTORS
PHYSICAL RADIATION EFFECTS
POWER AMPLIFIERS
RADIATION DOSES
REACTOR CONTROL SYSTEMS