Single event burnout sensitivity of embedded field effect transistors

Journal Article · Wed Dec 01 00:00:00 EST 1999 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers)

DOI:https://doi.org/10.1109/23.819098· OSTI ID:20014690

Koga, R; Crain, S H; Crawford, K B; Yu, P; Gordon, M J

Observations of single event burnout (SEB) in embedded field effect transistors are reported. Both SEB and other single event effects are presented for several pulse width modulation and high frequency devices. The microscope has been employed to locate and to investigate the damaged areas. A model of the damage mechanism based on the results so obtained is described.

• Research Organization: Aerospace Corp., El Segundo, CA (US)
• OSTI ID: 20014690
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers), Vol. 46, Issue 6Pt1; Conference: 1999 IEEE Nuclear and Space Radiation Effects Conference, Norfolk, VA (US), 07/12/1999--07/16/1999; Other Information: PBD: Dec 1999; ISSN 0018-9499
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
PHYSICAL RADIATION EFFECTS
FAILURES
FIELD EFFECT TRANSISTORS
MATHEMATICAL MODELS
SENSITIVITY
HEAVY IONS