Electrostatic modulation of the lateral carrier density profile in field effect devices with nonlinear dielectrics

Persky, Eylon; Yoon, Hyeok; Xie, Yanwu; Hwang, Harold Y.; Ruhman, Jonathan; Kalisky, Beena

doi:10.1103/physrevb.107.195427

Title: Electrostatic modulation of the lateral carrier density profile in field effect devices with nonlinear dielectrics

Journal Article · Fri May 19 00:00:00 EDT 2023 · Physical Review. B

DOI:https://doi.org/10.1103/physrevb.107.195427· OSTI ID:2001431

^[1]; Yoon, Hyeok ^[2]; Xie, Yanwu ^[3];

^[2];

^[1];

^[1]

Bar-Ilan Univ., Ramat Gan (Israel)
Stanford Univ., CA (United States); SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)
Stanford Univ., CA (United States); SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States); Zhejiang Univ., Hangzhou (China)

The properties of two-dimensional (2D) electronic systems are often effectively controlled using electrostatic gating. The geometry of such field effect devices influences the effectiveness of the gate and the carrier density profile in the 2D device. Here, in this work, we analyze the gate-induced spatial variations in the lateral carrier density in patterned LaAlO₃/SrTiO₃ devices. We model the electrostatics of the 2D interface using the Thomas-Fermi approximation and compute the gate-induced charge distribution at the interface. We show that the electric field lines generated by the gate are focused at the edges of the device, causing an increased depletion near its edges. This effect is accentuated in LaAlO₃/SrTiO₃ due to the large, nonlinear dielectric constant of the substrate, and the large distance between the gate electrode and the interface. We experimentally demonstrate one consequence of this effect by directly imaging current distributions in gated heterostructures, finding that insulating regions nucleate at the edges of the device due to the gate. Our results suggest that device geometry and choice of dielectric materials control the charge distribution in 2D systems.

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Research Organization:: SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), High Energy Physics (HEP); USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division (MSE)

Grant/Contract Number:: AC02-76SF00515

OSTI ID:: 2001431

Alternate ID(s):: OSTI ID: 1974472

Journal Information:: Physical Review. B, Vol. 107, Issue 19; ISSN 2469-9950

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Title: Electrostatic modulation of the lateral carrier density profile in field effect devices with nonlinear dielectrics

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