Dielectric collapse at the LaAlO3/SrTiO3 (001) heterointerface under applied electric field

Minohara, M.; Hikita, Y.; Bell, C.; Inoue, H.; Hosoda, M.; Sato, H. K.; Kumigashira, H.; Oshima, M.; Ikenaga, E.; Hwang, H. Y.

doi:10.1038/s41598-017-09920-9

Title: Dielectric collapse at the LaAlO₃/SrTiO₃ (001) heterointerface under applied electric field

Journal Article · Fri Aug 25 00:00:00 EDT 2017 · Scientific Reports

DOI:https://doi.org/10.1038/s41598-017-09920-9· OSTI ID:1390591

Minohara, M. ^[1]; Hikita, Y. ^[1]; Bell, C. ^[1]; Inoue, H. ^[2]; Hosoda, M. ^[3]; Sato, H. K. ^[3]; Kumigashira, H. ^[4]; Oshima, M. ^[5]; Ikenaga, E. ^[6]; Hwang, H. Y. ^[7]

SLAC National Accelerator Lab., Menlo Park, CA (United States)
Stanford Univ., CA (United States). Geballe Lab. for Advanced Materials
SLAC National Accelerator Lab., Menlo Park, CA (United States); Univ. of Tokyo (Japan)
High Energy Accelerator Research Organization (KEK), Tsukuba (Japan)
Univ. of Tokyo (Japan)
Japan Synchrotron Radiation Research Inst. (JASRI), Sayo (Japan)
SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., CA (United States). Geballe Lab. for Advanced Materials

The fascinating interfacial transport properties at the LaAlO₃/SrTiO₃ heterointerface have led to intense investigations of this oxide system. Exploiting the large dielectric constant of SrTiO₃ at low temperatures, tunability in the interfacial conductivity over a wide range has been demonstrated using a back-gate device geometry. In order to understand the effect of back-gating, it is crucial to assess the interface band structure and its evolution with external bias. In this study, we report measurements of the gate-bias dependent interface band alignment, especially the confining potential profile, at the conducting LaAlO₃/SrTiO₃ (001) heterointerface using soft and hard x-ray photoemission spectroscopy in conjunction with detailed model simulations. Depth-profiling analysis incorporating the electric field dependent dielectric constant in SrTiO₃ reveals that a significant potential drop on the SrTiO₃ side of the interface occurs within ~2 nm of the interface under negative gate-bias. These results demonstrate gate control of the collapse of the dielectric permittivity at the interface, and explain the dramatic loss of electron mobility with back-gate depletion.

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Research Organization:: SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)

Sponsoring Organization:: USDOE

Grant/Contract Number:: AC02-76SF00515

OSTI ID:: 1390591

Journal Information:: Scientific Reports, Vol. 7, Issue 1; ISSN 2045-2322

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 6 works

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References (35)

Origin of the dielectric dead layer in nanoscale capacitors Stengel, Massimiliano; Spaldin, Nicola A. Nature, Vol. 443, Issue 7112 https://doi.org/10.1038/nature05148	journal	October 2006
Origin of Metallic States at the Heterointerface between the Band Insulators ${LaAlO}_{3}$ and ${SrTiO}_{3}$ Yoshimatsu, K.; Yasuhara, R.; Kumigashira, H. Physical Review Letters, Vol. 101, Issue 2 https://doi.org/10.1103/PhysRevLett.101.026802	journal	July 2008
Interface takes charge over Si Oxide electronics Schlom, Darrell G.; Mannhart, Jochen Nature Materials, Vol. 10, Issue 3, p. 168-169 https://doi.org/10.1038/nmat2965	journal	March 2011
Anomalous response to gate voltage application in mesoscopic LaAlO $_{3}$ /SrTiO $_{3}$ devices Rakhmilevitch, D.; Neder, I.; Shalom, M. Ben Physical Review B, Vol. 87, Issue 12 https://doi.org/10.1103/PhysRevB.87.125409	journal	March 2013
Magnetic effects at the interface between non-magnetic oxides Brinkman, A.; Huijben, M.; van Zalk, M. Nature Materials, Vol. 6, Issue 7, p. 493-496 https://doi.org/10.1038/nmat1931	journal	June 2007
Mapping the spatial distribution of charge carriers in LaAlO3/SrTiO3 heterostructures Basletic, M.; Maurice, J. -L.; Carrétéro, C. Nature Materials, Vol. 7, Issue 8 https://doi.org/10.1038/nmat2223	journal	June 2008
Effect of electric field and post-treatment on dielectric behavior of SrTiO3 single crystal Ang, Chen; Guo, Ruyan; Bhalla, A. S. Journal of Applied Physics, Vol. 87, Issue 8 https://doi.org/10.1063/1.372438	journal	April 2000
Characterization of the Schottky barrier in SrRuO3∕Nb:SrTiO3 junctions Hikita, Y.; Kozuka, Y.; Susaki, T. Applied Physics Letters, Vol. 90, Issue 14 https://doi.org/10.1063/1.2719157	journal	April 2007
Structural Basis for the Conducting Interface between ${LaAlO}_{3}$ and ${SrTiO}_{3}$ Willmott, P. R.; Pauli, S. A.; Herger, R. Physical Review Letters, Vol. 99, Issue 15, Article No. 155502 https://doi.org/10.1103/PhysRevLett.99.155502	journal	October 2007
Two-Dimensional Superconducting Phase in ${LaTiO}_{3} / {SrTiO}_{3}$ Heterostructures Induced by High-Mobility Carrier Doping Biscaras, J.; Bergeal, N.; Hurand, S. Physical Review Letters, Vol. 108, Issue 24 https://doi.org/10.1103/PhysRevLett.108.247004	journal	June 2012
High Mobility in ${LaAlO}_{3} / {SrTiO}_{3}$ Heterostructures: Origin, Dimensionality, and Perspectives Herranz, G.; Basletić, M.; Bibes, M. Physical Review Letters, Vol. 98, Issue 21, Article No. 216803 https://doi.org/10.1103/PhysRevLett.98.216803	journal	May 2007
Dominant Mobility Modulation by the Electric Field Effect at the ${LaAlO}_{3} / {SrTiO}_{3}$ Interface Bell, C.; Harashima, S.; Kozuka, Y. Physical Review Letters, Vol. 103, Issue 22 https://doi.org/10.1103/PhysRevLett.103.226802	journal	November 2009
Gate-Controlled Spin Injection at ${LaAlO}_{3} / {SrTiO}_{3}$ Interfaces Reyren, N.; Bibes, M.; Lesne, E. Physical Review Letters, Vol. 108, Issue 18 https://doi.org/10.1103/PhysRevLett.108.186802	journal	April 2012
Coexistence of Superconductivity and Ferromagnetism in Two Dimensions Dikin, D. A.; Mehta, M.; Bark, C. W. Physical Review Letters, Vol. 107, Issue 5, Article No. 056802 https://doi.org/10.1103/PhysRevLett.107.056802	journal	July 2011
Dielectric properties of sputtered ${SrTiO}_{3}$ films Christen, H. -M.; Mannhart, J.; Williams, E. J. Physical Review B, Vol. 49, Issue 17 https://doi.org/10.1103/PhysRevB.49.12095	journal	May 1994
Electronic phase separation at the LaAlO3/SrTiO3 interface Nature Communications, Vol. 2, Issue 1 https://doi.org/10.1038/ncomms1192	journal	February 2011
Electric field control of the LaAlO3/SrTiO3 interface ground state Caviglia, A. D.; Gariglio, S.; Reyren, N. Nature, Vol. 456, Issue 7222 https://doi.org/10.1038/nature07576	journal	December 2008
Electric-Field-Induced Polar Order and Localization of the Confined Electrons in ${LaAlO}_{3} / {SrTiO}_{3}$ Heterostructures Rössle, M.; Kim, K. W.; Dubroka, A. Physical Review Letters, Vol. 110, Issue 13 https://doi.org/10.1103/PhysRevLett.110.136805	journal	March 2013
Transistor operation and mobility enhancement in top-gated LaAlO ₃ /SrTiO ₃ heterostructures Hosoda, Masayuki; Hikita, Yasuyuki; Hwang, Harold Y. Applied Physics Letters, Vol. 103, Issue 10 https://doi.org/10.1063/1.4820449	journal	September 2013
Permittivity of Strontium Titanate Neville, R. C.; Hoeneisen, B.; Mead, C. A. Journal of Applied Physics, Vol. 43, Issue 5 https://doi.org/10.1063/1.1661463	journal	May 1972
Emergent phenomena at oxide interfaces Hwang, H. Y.; Iwasa, Y.; Kawasaki, M. Nature Materials, Vol. 11, Issue 2 https://doi.org/10.1038/nmat3223	journal	January 2012
Towards Two-Dimensional Metallic Behavior at ${LaAlO}_{3} / {SrTiO}_{3}$ Interfaces Copie, O.; Garcia, V.; Bödefeld, C. Physical Review Letters, Vol. 102, Issue 21 https://doi.org/10.1103/PhysRevLett.102.216804	journal	May 2009
Nanoscale control of an interfacial metal–insulator transition at room temperature Cen, C.; Thiel, S.; Hammerl, G. Nature Materials, Vol. 7, Issue 4 https://doi.org/10.1038/nmat2136	journal	March 2008
A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface Ohtomo, A.; Hwang, H. Y. Nature, Vol. 427, Issue 6973 https://doi.org/10.1038/nature02308	journal	January 2004
Origin of Charge Density at ${LaAlO}_{3}$ on ${SrTiO}_{3}$ Heterointerfaces: Possibility of Intrinsic Doping Siemons, Wolter; Koster, Gertjan; Yamamoto, Hideki Physical Review Letters, Vol. 98, Issue 19, Article No. 196802 https://doi.org/10.1103/PhysRevLett.98.196802	journal	May 2007
Why some interfaces cannot be sharp Nakagawa, Naoyuki; Hwang, Harold Y.; Muller, David A. Nature Materials, Vol. 5, Issue 3, p. 204-209 https://doi.org/10.1038/nmat1569	journal	January 2006
Tunable Quasi-Two-Dimensional Electron Gases in Oxide Heterostructures Thiel, S. Science, Vol. 313, Issue 5795, p. 1942-1945 https://doi.org/10.1126/science.1131091	journal	September 2006
Superconducting Interfaces Between Insulating Oxides Reyren, N.; Thiel, S.; Caviglia, A. D. Science, Vol. 317, Issue 5842 https://doi.org/10.1126/science.1146006	journal	August 2007
A universal critical density underlying the physics of electrons at the LaAlO3/SrTiO3 interface Joshua, Arjun; Pecker, S.; Ruhman, J. Nature Communications, Vol. 3, Issue 1 https://doi.org/10.1038/ncomms2116	journal	January 2012
Calculation of electron inelastic mean free paths (IMFPs) VII. Reliability of the TPP-2M IMFP predictive equation Tanuma, S.; Powell, C. J.; Penn, D. R. Surface and Interface Analysis, Vol. 35, Issue 3 https://doi.org/10.1002/sia.1526	journal	January 2003
Depth profiling the potential in perovskite oxide heterojunctions using photoemission spectroscopy Minohara, M.; Horiba, K.; Kumigashira, H. Physical Review B, Vol. 85, Issue 16 https://doi.org/10.1103/PhysRevB.85.165108	journal	April 2012
Effect of oxygen vacancies in the ${SrTiO}_{3}$ substrate on the electrical properties of the ${LaAlO}_{3} ∕ {SrTiO}_{3}$ interface Kalabukhov, Alexey; Gunnarsson, Robert; Börjesson, Johan Physical Review B, Vol. 75, Issue 12 https://doi.org/10.1103/PhysRevB.75.121404	journal	March 2007
Theory of the SrTiO $_{3}$ surface state two-dimensional electron gas Khalsa, Guru; MacDonald, A. H. Physical Review B, Vol. 86, Issue 12 https://doi.org/10.1103/PhysRevB.86.125121	journal	September 2012
Accumulation, inversion, and depletion layers in ${SrTiO}_{3}$ Reich, K. V.; Schecter, M.; Shklovskii, B. I. Physical Review B, Vol. 91, Issue 11 https://doi.org/10.1103/PhysRevB.91.115303	journal	March 2015
Effect of the Field Dependent Permittivity and Interfacial Layer on $\bf Ba_{1-{\ninmbi x}}K_{\ninmbi x}BiO_{3}/Nb$-Doped $\bf SrTiO_{3}$ Schottky Junctions Yamamoto, Tetsuya; Suzuki, Seiji; Suzuki, Hiroshi Japanese Journal of Applied Physics, Vol. 36, Issue Part 2, No. 4A https://doi.org/10.1143/JJAP.36.L390	journal	April 1997

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Charge-transfer in B-site-depleted NdGaO ₃ /SrTiO ₃ heterostructures Gunkel, F.; Lenser, C.; Baeumer, C. APL Materials, Vol. 6, Issue 7 https://doi.org/10.1063/1.5038773	journal	July 2018
Charge-transfer in B-site-depleted NdGaO3/SrTiO3 heterostructures Gunkel, Felix; Lenser, C.; Bäumer, Christoph RWTH Aachen University https://doi.org/10.18154/rwth-2018-226840	text	January 2018

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