Thermopower, electrical and Hall conductivity of undoped and doped iron disilicide single crystals
Conference
·
OSTI ID:20014266
The electrical transport properties of {beta}-FeSi{sub 2} single crystals have been investigated in dependence on the purity of the source material and on doping with 3d transition metals. The transport properties included are electrical conductivity, Hall conductivity and thermopower mainly in the temperature range from 4K to 300K. The single crystals have been prepared by chemical transport reaction in a closed system with iodine as transport agent. In undoped single crystals prepared with 5N Fe both electrical conductivity and thermopower depend on the composition within the homogeneity range of {beta}-FeSi{sub 2} which is explained by different intrinsic defects at the Si-rich and Fe-rich phase boundaries. In both undoped and doped single crystals impurity band conduction is observed at low temperatures but above 100K extrinsic behavior determined by shallow impurity states. The thermopower shows between 100K and 200K a significant phonon drag contribution which depends on intrinsic defects and additional doping. The Hall resistivity is considered mainly with respect to an anomalous contribution found in p-type and n-type single crystals and thin films. In addition doped single crystals show at temperatures below about 130K an hysteresis of the Hall voltage. These results make former mobility data uncertain. Comparison will be made between the transport properties of single crystals and polycrystalline material.
- Research Organization:
- Inst. fuer Festkoerper- und Werkstofforschung, Dresden (DE)
- Sponsoring Organization:
- Bundesministerium fuer Forschung und Technologie
- OSTI ID:
- 20014266
- Country of Publication:
- United States
- Language:
- English
Similar Records
Effect of residual impurities on transport properties of {beta}-FeSi{sub 2} epitaxial films grown by molecular beam epitaxy
Effect of using a high-purity Fe source on the transport properties of p-type {beta}-FeSi{sub 2} grown by molecular-beam epitaxy
The Hall mobility and its relationship with persistent photoconductivity of undoped GaN
Journal Article
·
Sun Jul 01 00:00:00 EDT 2012
· Journal of Applied Physics
·
OSTI ID:22089298
Effect of using a high-purity Fe source on the transport properties of p-type {beta}-FeSi{sub 2} grown by molecular-beam epitaxy
Journal Article
·
Wed Nov 14 23:00:00 EST 2007
· Journal of Applied Physics
·
OSTI ID:21064447
The Hall mobility and its relationship with persistent photoconductivity of undoped GaN
Journal Article
·
Fri Dec 31 23:00:00 EST 1999
· Journal of Electronic Materials
·
OSTI ID:20015387