Thermoelectric power of Bi and Bi{sub 1{minus}x}Sb{sub x} alloy thin films and superlattices grown by MBE
The authors have measured the thermoelectric power (TEP) of MBE-grown epitaxial Bi and Bi{sub 1{minus}x} alloy thin films and superlattices as a function of temperature in the range 20--300 K. They have observed that the TEP of a Bi thin film of 1 {micro}m thickness is in good agreement with the bulk single crystal value and that the TEPs for superlattices with 400 {angstrom} and 800 {angstrom} Bi well thicknesses are enhanced over the bulk values. For x = 0.072 and 0.088 in Bi{sub 1{minus}x}Sb{sub x} thin films showing semiconducting behavior, TEP enhancement was observed by a factor of two. However as Bi or Bi{sub 1{minus}x}Sb{sub x} well thickness decreases in superlattice geometry, the TEP decreases, which may be due to unintentional p-type doping.
- Research Organization:
- Northwestern Univ., Evanston, IL (US)
- Sponsoring Organization:
- Advanced Research Projects Agency; US Department of the Navy, Office of Naval Research (ONR); National Science Foundation (NSF)
- OSTI ID:
- 20014241
- Resource Relation:
- Conference: 1997 Materials Research Society Spring Meeting, San Francisco, CA (US), 03/31/1997--04/03/1997; Other Information: Single article reprints are available through University Microfilms Inc., 300 North Zeeb Road, Ann Arbor, Michigan 48106; PBD: 1997; Related Information: In: Thermoelectric materials -- New directions and approaches. Materials Research Society symposium proceedings, Volume 478, by Tritt, T.M.; Kanatzidis, M.G.; Lyon, H.B. Jr.; Mahan, G.D. [eds.], 359 pages.
- Country of Publication:
- United States
- Language:
- English
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