Capacitance pressure sensor
Patent
·
OSTI ID:20013916
A microelectromechanical (MEM) capacitance pressure sensor integrated with electronic circuitry on a common substrate and a method for forming such a device are disclosed. The MEM capacitance pressure sensor includes a capacitance pressure sensor formed at least partially in a cavity etched below the surface of a silicon substrate and adjacent circuitry (CMOS, BiCMOS, or bipolar circuitry) formed on the substrate. By forming the capacitance pressure sensor in the cavity, the substrate can be planarized (e.g. by chemical-mechanical polishing) so that a standard set of integrated circuit processing steps can be used to form the electronic circuitry (e.g. using an aluminum or aluminum-alloy interconnect metallization).
- Sponsoring Organization:
- US Department of Energy
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 20013916
- Country of Publication:
- United States
- Language:
- English
Similar Records
Capacitance pressure sensor
Chemical-mechanical polishing of recessed microelectromechanical devices
Chemical-mechanical polishing of recessed microelectromechanical devices
Patent
·
Fri Dec 31 23:00:00 EST 1999
·
OSTI ID:872803
Chemical-mechanical polishing of recessed microelectromechanical devices
Patent
·
Thu Dec 31 23:00:00 EST 1998
·
OSTI ID:872368
Chemical-mechanical polishing of recessed microelectromechanical devices
Patent
·
Tue Jul 06 00:00:00 EDT 1999
·
OSTI ID:6431766