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Title: Capacitance pressure sensor

Abstract

A microelectromechanical (MEM) capacitance pressure sensor integrated with electronic circuitry on a common substrate and a method for forming such a device are disclosed. The MEM capacitance pressure sensor includes a capacitance pressure sensor formed at least partially in a cavity etched below the surface of a silicon substrate and adjacent circuitry (CMOS, BiCMOS, or bipolar circuitry) formed on the substrate. By forming the capacitance pressure sensor in the cavity, the substrate can be planarized (e.g. by chemical-mechanical polishing) so that a standard set of integrated circuit processing steps can be used to form the electronic circuitry (e.g. using an aluminum or aluminum-alloy interconnect metallization).

Inventors:
 [1];  [2];  [2]
  1. Tijeras, NM
  2. Albuquerque, NM
Publication Date:
Research Org.:
SANDIA CORP
OSTI Identifier:
872803
Patent Number(s):
US 6012336
Assignee:
Sandia Corporation (Albuquerque, NM)
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
capacitance; pressure; sensor; microelectromechanical; integrated; electronic; circuitry; common; substrate; method; forming; device; disclosed; formed; partially; cavity; etched; below; surface; silicon; adjacent; cmos; bicmos; bipolar; planarized; chemical-mechanical; polishing; standard; set; circuit; processing; steps; form; aluminum; aluminum-alloy; interconnect; metallization; chemical-mechanical polishing; common substrate; capacitance pressure; electronic circuit; silicon substrate; integrated circuit; electronic circuitry; pressure sensor; processing steps; processing step; cavity etched; mechanical polishing; /73/

Citation Formats

Eaton, William P, Staple, Bevan D, and Smith, James H. Capacitance pressure sensor. United States: N. p., 2000. Web.
Eaton, William P, Staple, Bevan D, & Smith, James H. Capacitance pressure sensor. United States.
Eaton, William P, Staple, Bevan D, and Smith, James H. Sat . "Capacitance pressure sensor". United States. https://www.osti.gov/servlets/purl/872803.
@article{osti_872803,
title = {Capacitance pressure sensor},
author = {Eaton, William P and Staple, Bevan D and Smith, James H},
abstractNote = {A microelectromechanical (MEM) capacitance pressure sensor integrated with electronic circuitry on a common substrate and a method for forming such a device are disclosed. The MEM capacitance pressure sensor includes a capacitance pressure sensor formed at least partially in a cavity etched below the surface of a silicon substrate and adjacent circuitry (CMOS, BiCMOS, or bipolar circuitry) formed on the substrate. By forming the capacitance pressure sensor in the cavity, the substrate can be planarized (e.g. by chemical-mechanical polishing) so that a standard set of integrated circuit processing steps can be used to form the electronic circuitry (e.g. using an aluminum or aluminum-alloy interconnect metallization).},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2000},
month = {1}
}

Patent:

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