Ferroelectric thin films 6. Materials Research Society symposium proceedings Volume 493
- eds.
This new volume from MRS, the sixth in a series on ferroelectric thin films, presents a wide range of topics spanning basic academic research to applied integration issues. Fundamental materials studies, new growth methods, device and materials integration research, and developments in the design and growth of new materials, all involving epitaxial, polycrystalline and nanocrystalline ferroelectric thin films, are featured. In addition, since ULSI chip manufacturers are seriously considering incorporating ferroelectric DRAM technology into existing fabrication facilities, the industrial interest and resulting research is causing an explosion in ferroelectrics. To that end, the volume presents the latest technical information on ferroelectric thin films from academia, government organizations and industry as well. Topics include: high-permittivity DRAM materials; domains and size effects; barriers and electrodes; bilayered ferroelectrics; Pb-based ferroelectrics; microwave and optical devices; materials for piezoelectric MEMs; and novel ferroelectric devices.
- OSTI ID:
- 20013771
- Report Number(s):
- CONF-971201-; ISBN 1-55899-398-3; TRN: IM200011%%76
- Resource Relation:
- Conference: 1997 Materials Research Society Fall Meeting, Boston, MA (US), 12/01/1997--12/05/1997; Other Information: PBD: 1998
- Country of Publication:
- United States
- Language:
- English
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