Nitride semiconductors. Materials Research Society symposium proceedings Volume 482
- eds.
This new volume from the Materials Research Society focuses on recent experimental and theoretical progress in the rapidly growing field of III-V nitrides. Issues related to crystal growth (bulk and thin films), structure and microstructure, formation of defects, doping, alloying, formation of heterostructures, determination of physical properties and device fabrication and evaluation are addressed. Invited papers give a thorough review of the state of the art in the field. The large number of contributed papers show much progress in the growth and understanding of III-V nitrides and in the production of optoelectronic devices based on these materials. Most exciting is the fact that light-emitting diodes and laser diodes have now reached amazing levels of performance which enables a number of commercial applications, and which forecasts a revolution in lighting, optical storage, printing, and display technologies. Topics include: crystal growth--bulk growth, early stages of epitaxy; crystal growth--MOCVD; growth techniques--MBE and HVPE; novel substrates and growth techniques; structural properties; electronic properties; luminescence and recombination; characterization, elemental and stress analysis; physical modeling; device processing, implantation, annealing; device characterization, contacts, degradation; and injection laser diodes and applications.
- OSTI ID:
- 20013766
- Report Number(s):
- CONF-971201-; ISBN 1-55899-387-8; TRN: IM200011%%71
- Resource Relation:
- Conference: 1997 Materials Research Society Fall Meeting, Boston, MA (US), 12/01/1997--12/05/1997; Other Information: PBD: 1998
- Country of Publication:
- United States
- Language:
- English
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