Radiative substrate heating for high-t(c) superconducting thin-film deposition: Film-growth-induced temperature variation. (Reannouncement with new availability information)
The authors have examined the problem of substrate temperature changes during the growth of YBa2Cu3O7-x (YBCO) thin films on LaAlO3 when the substrate is radiatively heated. Substrate temperature variations sufficient to degrade film quality occur unless the heater temperature is controlled during growth. At a heater temperature of 900 deg C, the temperature of a LaAlO3 substrate was measured to be only 540 deg C, while a similar substrate with a 2000-A YBCO film reached 640 deg C. The experimental data and calculations indicate that the heater temperature must be as high as 1240 deg C to heat LaAlO3 to 730 deg C, and must be decreased by over 200 deg C during the first 500 A of film deposition to maintain a constant substrate temperature during film growth. This study shows the need for an in situ noncontact substrate temperature measurement technique.
- Research Organization:
- Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.
- OSTI ID:
- 200116
- Report Number(s):
- AD-A-262430/2/XAB; JA-6825; CNN: Contract F19628-90-C-0002; TRN: 60510305
- Resource Relation:
- Other Information: PBD: Dec 1992
- Country of Publication:
- United States
- Language:
- English
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