The effects of water vapor, heating, and chemical and mechanical polishing on MOS capacitors passivated with BaF{sub 2}-B{sub 2}O{sub 3}-GeO{sub 2}-SiO{sub 2} glasses[Metal Oxide Semiconductor]
The capacitance and voltage (C-V) characteristics of metal oxide semiconductor (MOS) capacitors passivated with BaF{sub 2}-B{sub 2}O{sub 3}-GeO{sub 2}-SiO{sub 2} and BaO-B{sub 2}O{sub 3}-GeO{sub 2}-SiO{sub 2} glasses with various OH{sup {minus}} radicals and the effects of water vapor, heat, and chemical and mechanical polishing on these MOS capacitors were investigated. As the OH{sup {minus}} absorption coefficients of the glasses increased, an adverse effect on the recovery of hysteresis loops of C-V shifts was observed. An adverse effect on the hysteresis loops and V{sub g} shifts was observed when the MOS capacitors were exposed to water vapor, but the hysteresis of the MOS capacitor passivated with BaF{sub 2}-containing glass disappeared following heat treatment at 400 C for 1 h. When chemical and mechanical polishing was applied to the glasses in the MOS capacitors, improvements in hysteresis and V{sub g} shifts were observed.
- Research Organization:
- Toshiba Advanced Semiconductor Lab., Yokohama (JP)
- OSTI ID:
- 20006463
- Journal Information:
- Materials Research Bulletin, Vol. 34, Issue 9; Other Information: PBD: 1 Jul 1999; ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
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