Very thin film crystalline silicon solar cells on glass substrate fabricated at low temperature
The performances of thin-film poly-Si solar cells with a thickness of less than 5 {micro}m on a glass substrate have been investigated. The cell of glass/back reflector/n-i-p-type Si/ITO is well characterized by the structure of naturally surface texture and enhanced absorption with a back reflector (STAR), where the active i-type poly-Si layer was fabricated by plasma chemical vapor depositing (CVD) at low temperature. The cell with a thickness of 2.0 {micro}m demonstrated an intrinsic efficiency of 10.7% (aperture 10.1%), the open-circuit voltage of 0.539 V and the short current density of 25.8 mA/cm{sub 2} as independently confirmed by Japan Quality Assurance, which shows the no clear light-induced degradation. The optical and transport properties of poly-Si cells are summarized.
- Research Organization:
- Kaneka Corp., Kobe (JP)
- OSTI ID:
- 20006076
- Journal Information:
- IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers), Vol. 46, Issue 10; Other Information: PBD: Oct 1999; ISSN 0018-9383
- Country of Publication:
- United States
- Language:
- English
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