Thin-film polycrystalline Si solar cell on glass substrate fabricated by a novel low temperature process
- Kaneka Corp., Kobe (Japan). Central Research Labs.
Thin film polycrystalline Si solar cells on glass substrates were fabricated by the excimer laser annealing of heavily boron doped a-Si and the subsequent deposition of polycrystalline Si on them by plasma-enhanced chemical vapor deposition at low temperature. The resistivity of the boron doped laser annealed polycrystalline Si film reaches to the 2 {times} 10{sup {minus}4} {Omega}{center_dot}cm, which shows a strong (111) preferred orientation. The structure of the solar cell presented here is ITO/n {micro}c-Si:H (30 nm)/p poly-Si (2 {micro}m)/p{sup +} poly Si (300 nm)/glass substrate, which shows sufficiently high current density despite the low-temperature fabrication. This sufficiently high Jsc is postulated to be both due to the hydrogen passivation of the grain-boundary and the low carrier concentration of poly-Si film by low temperature fabrication.
- OSTI ID:
- 191077
- Report Number(s):
- CONF-941203--; ISBN 0-7803-1459-X
- Country of Publication:
- United States
- Language:
- English
Similar Records
Microstructural defects of device quality hot-wire CVD poly-silicon films
Development of thin-film polycrystalline silicon solar cells by a solid phase crystallization (SPC) method
Related Subjects
36 MATERIALS SCIENCE
ANNEALING
BORON
CHEMICAL VAPOR DEPOSITION
CURRENT DENSITY
DIFFUSION LENGTH
DOPED MATERIALS
ELECTRIC POTENTIAL
ELECTRICAL PROPERTIES
EXPERIMENTAL DATA
FILL FACTORS
GRAIN SIZE
HYDROGEN
MICROSTRUCTURE
PERFORMANCE
QUANTUM EFFICIENCY
SILANES
SILICON
SILICON SOLAR CELLS
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION