Thin-film polycrystalline Si solar cell on glass substrate fabricated by a novel low temperature process
- Kaneka Corp., Kobe (Japan). Central Research Labs.
Thin film polycrystalline Si solar cells on glass substrates were fabricated by the excimer laser annealing of heavily boron doped a-Si and the subsequent deposition of polycrystalline Si on them by plasma-enhanced chemical vapor deposition at low temperature. The resistivity of the boron doped laser annealed polycrystalline Si film reaches to the 2 {times} 10{sup {minus}4} {Omega}{center_dot}cm, which shows a strong (111) preferred orientation. The structure of the solar cell presented here is ITO/n {micro}c-Si:H (30 nm)/p poly-Si (2 {micro}m)/p{sup +} poly Si (300 nm)/glass substrate, which shows sufficiently high current density despite the low-temperature fabrication. This sufficiently high Jsc is postulated to be both due to the hydrogen passivation of the grain-boundary and the low carrier concentration of poly-Si film by low temperature fabrication.
- OSTI ID:
- 191077
- Report Number(s):
- CONF-941203-; ISBN 0-7803-1459-X; TRN: IM9610%%78
- Resource Relation:
- Conference: 1. world conference on photovoltaic energy conversion, Waikoloa, HI (United States), 5-9 Dec 1994; Other Information: PBD: 1994; Related Information: Is Part Of 1994 IEEE first world conference on photovoltaic energy conversion: Conference record of the twenty-fourth IEEE photovoltaic specialists conference -- 1994. Volume 2; PB: 1268 p.
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
SILICON SOLAR CELLS
PERFORMANCE
SILICON
CHEMICAL VAPOR DEPOSITION
MICROSTRUCTURE
ELECTRICAL PROPERTIES
SILANES
HYDROGEN
DOPED MATERIALS
BORON
ANNEALING
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION
GRAIN SIZE
DIFFUSION LENGTH
QUANTUM EFFICIENCY
CURRENT DENSITY
ELECTRIC POTENTIAL
FILL FACTORS
EXPERIMENTAL DATA