Voltage control of magnetism in Fe3-xGeTe2/In2Se3 van der Waals ferromagnetic/ferroelectric heterostructures

Eom, Jaeun; Lee, In Hak; Kee, Jung Yun; Cho, Minhyun; Seo, Jeongdae; Suh, Hoyoung; Choi, Hyung-Jin; Sim, Yumin; Chen, Shuzhang; Chang, Hye Jung; Baek, Seung-Hyub; Petrovic, Cedomir; Ryu, Hyejin; Jang, Chaun; Kim, Young Duck; Yang, Chan-Ho; Seong, Maeng-Je; Lee, Jin Hong; Park, Se Young; Choi, Jun Woo

doi:10.1038/s41467-023-41382-8

Title: Voltage control of magnetism in Fe3-xGeTe2/In2Se3 van der Waals ferromagnetic/ferroelectric heterostructures

Journal Article · Tue Sep 12 00:00:00 EDT 2023 · Nature Communications

DOI:https://doi.org/10.1038/s41467-023-41382-8· OSTI ID:1999702

; Lee, In Hak; Kee, Jung Yun; Cho, Minhyun; Seo, Jeongdae; Suh, Hoyoung; Choi, Hyung-Jin; Sim, Yumin; Chen, Shuzhang;

; Baek, Seung-Hyub;

;

; Jang, Chaun;

;

Abstract We investigate the voltage control of magnetism in a van der Waals (vdW) heterostructure device consisting of two distinct vdW materials, the ferromagnetic Fe _{3- x} GeTe ₂ and the ferroelectric In ₂ Se ₃ . It is observed that gate voltages applied to the Fe _{3- x} GeTe ₂ /In ₂ Se ₃ heterostructure device modulate the magnetic properties of Fe _{3- x} GeTe ₂ with significant decrease in coercive field for both positive and negative voltages. Raman spectroscopy on the heterostructure device shows voltage-dependent increase in the in-plane In ₂ Se ₃ and Fe _{3- x} GeTe ₂ lattice constants for both voltage polarities. Thus, the voltage-dependent decrease in the Fe _{3- x} GeTe ₂ coercive field, regardless of the gate voltage polarity, can be attributed to the presence of in-plane tensile strain. This is supported by density functional theory calculations showing tensile-strain-induced reduction of the magnetocrystalline anisotropy, which in turn decreases the coercive field. Our results demonstrate an effective method to realize low-power voltage-controlled vdW spintronic devices utilizing the magnetoelectric effect in vdW ferromagnetic/ferroelectric heterostructures.

View Journal Article

Cite

Export

Save

Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States); Kyung Hee Univ., Seoul (Korea, Republic of)

Sponsoring Organization:: USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division (MSE); National Research Foundation of Korea (NRF); Ministry of Science and ICT (MIST)

Grant/Contract Number:: SC0012704; 2017R1A3B1023686; 2021R1C1C1009494; 2021R1A6A1A03043957; NRF-2021R1A2C2011007; NRF-2021M3H4A1A03054856; NRF-2020R1A5A1016518; NRF-2021R1A2C2014179; 2022R1A4A3030766; 2021R1A2C2093155

OSTI ID:: 1999702

Alternate ID(s):: OSTI ID: 2284064

Report Number(s):: BNL-225261-2024-JAAM; 5605; PII: 41382

Journal Information:: Nature Communications, Journal Name: Nature Communications Vol. 14 Journal Issue: 1; ISSN 2041-1723

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United Kingdom

Language:: English

References (63)

Giant gauge factor of Van der Waals material based strain sensors Yan, Wenjie; Fuh, Huei-Ru; Lv, Yanhui Nature Communications, Vol. 12, Issue 1 https://doi.org/10.1038/s41467-021-22316-8	journal	April 2021
Generalized Gradient Approximation Made Simple Perdew, John P.; Burke, Kieron; Ernzerhof, Matthias Physical Review Letters, Vol. 77, Issue 18, p. 3865-3868 https://doi.org/10.1103/PhysRevLett.77.3865	journal	October 1996
Controlling the Magnetic Anisotropy of the van der Waals Ferromagnet Fe ₃ GeTe ₂ through Hole Doping Park, Se Young; Kim, Dong Seob; Liu, Yu Nano Letters, Vol. 20, Issue 1 https://doi.org/10.1021/acs.nanolett.9b03316	journal	November 2019
Room-temperature ferroelectricity and a switchable diode effect in two-dimensional α-In ₂ Se ₃ thin layers Wan, Siyuan; Li, Yue; Li, Wei Nanoscale, Vol. 10, Issue 31 https://doi.org/10.1039/C8NR04422H	journal	January 2018
Multiferroic Heterostructures Integrating Ferroelectric and Magnetic Materials Hu, Jia-Mian; Chen, Long-Qing; Nan, Ce-Wen Advanced Materials, Vol. 28, Issue 1 https://doi.org/10.1002/adma.201502824	journal	November 2015
Scalable energy-efficient magnetoelectric spin–orbit logic Manipatruni, Sasikanth; Nikonov, Dmitri E.; Lin, Chia-Ching Nature, Vol. 565, Issue 7737 https://doi.org/10.1038/s41586-018-0770-2	journal	December 2018
Projector augmented-wave method Blöchl, P. E. Physical Review B, Vol. 50, Issue 24, p. 17953-17979 https://doi.org/10.1103/PhysRevB.50.17953	journal	December 1994
Two-dimensional itinerant ferromagnetism in atomically thin Fe3GeTe2 Fei, Zaiyao; Huang, Bevin; Malinowski, Paul Nature Materials, Vol. 17, Issue 9 https://doi.org/10.1038/s41563-018-0149-7	journal	August 2018
Localized Strain Measurement in Molecular Beam Epitaxially Grown Chalcogenide Thin Films by Micro-Raman Spectroscopy Li, Qiu; Wang, Yong; Li, Tiantian ACS Omega, Vol. 5, Issue 14 https://doi.org/10.1021/acsomega.0c00224	journal	March 2020
Multiferroic magnetoelectric composite nanostructures Wang, Yao; Hu, Jiamian; Lin, Yuanhua NPG Asia Materials, Vol. 2, Issue 2 https://doi.org/10.1038/asiamat.2010.32	journal	April 2010
Low‐Temperature Bending Fatigue of MXene/PDMS Flexible Pressure Sensor Song, Jian‐Yao; Yu, Pei‐Lun; Li, Jian‐Chang Advanced Materials Interfaces, Vol. 9, Issue 32 https://doi.org/10.1002/admi.202201463	journal	October 2022
Low-voltage magnetoelectric coupling in membrane heterostructures Lindemann, Shane; Irwin, Julian; Kim, Gi-Yeop Science Advances, Vol. 7, Issue 46 https://doi.org/10.1126/sciadv.abh2294	journal	November 2021
Giant tunneling magnetoresistance and electroresistance in α−In2Se3 -based van der Waals multiferroic tunnel junctions Yan, Zhi; Li, Zeyu; Han, Yulei Physical Review B, Vol. 105, Issue 7 https://doi.org/10.1103/PhysRevB.105.075423	journal	February 2022
From ultrasoft pseudopotentials to the projector augmented-wave method Kresse, G.; Joubert, D. Physical Review B, Vol. 59, Issue 3, p. 1758-1775 https://doi.org/10.1103/PhysRevB.59.1758	journal	January 1999
Highly Strain-Tunable Interlayer Excitons in MoS₂/WSe₂ Heterobilayers Cho, Chullhee; Wong, Joeson; Taqieddin, Amir Nano Letters, Vol. 21, Issue 9 https://doi.org/10.1021/acs.nanolett.1c00724	journal	April 2021
Raman evidence for pressure-induced formation of diamondene Martins, Luiz Gustavo Pimenta; Matos, Matheus J. S.; Paschoal, Alexandre R. Nature Communications, Vol. 8, Issue 1 https://doi.org/10.1038/s41467-017-00149-8	journal	July 2017
Two-dimensional materials prospects for non-volatile spintronic memories Yang, Hyunsoo; Valenzuela, Sergio O.; Chshiev, Mairbek Nature, Vol. 606, Issue 7915 https://doi.org/10.1038/s41586-022-04768-0	journal	June 2022
Anharmonic Phonon Coupling in Single-Crystal Semiconducting and Metal-Like van der Waals In ₂ Se ₃ Igo, John; Zhou, Shengwen; Yu, Zhi-Gang The Journal of Physical Chemistry C, Vol. 122, Issue 40 https://doi.org/10.1021/acs.jpcc.8b06247	journal	July 2018
Asymmetric Metal/α-In₂Se₃/Si Crossbar Ferroelectric Semiconductor Junction Si, Mengwei; Zhang, Zhuocheng; Chang, Sou-Chi ACS Nano, Vol. 15, Issue 3 https://doi.org/10.1021/acsnano.1c00968	journal	March 2021
Raman scattering in α-In2Se3 crystals Lewandowska, R.; Bacewicz, R.; Filipowicz, J. Materials Research Bulletin, Vol. 36, Issue 15 https://doi.org/10.1016/S0025-5408(01)00746-2	journal	December 2001
Interfacial coupling induced critical thickness for the ferroelectric bistability of two-dimensional ferromagnet/ferroelectric van der Waals heterostructures Huang, Xiaokun; Li, Guannan; Chen, Chao Physical Review B, Vol. 100, Issue 23 https://doi.org/10.1103/PhysRevB.100.235445	journal	December 2019
Strain‐Sensitive Magnetization Reversal of a van der Waals Magnet Wang, Yu; Wang, Cong; Liang, Shi‐Jun Advanced Materials, Vol. 32, Issue 42 https://doi.org/10.1002/adma.202004533	journal	September 2020
Piezoelectric biaxial strain effects on the optical and photoluminescence spectra of 2D III–VI compound α -In2Se3 nanosheets Guo, Feng; Lyu, Yongxin; Jedrzejczyk, Michal Bartlomiej Applied Physics Letters, Vol. 116, Issue 11 https://doi.org/10.1063/5.0001795	journal	March 2020
Anomalous Hall effect in the van der Waals bonded ferromagnet ${Fe}_{3 - x} {GeTe}_{2}$ Liu, Yu; Stavitski, Eli; Attenkofer, Klaus Physical Review B, Vol. 97, Issue 16 https://doi.org/10.1103/PhysRevB.97.165415	journal	April 2018
Magnetoelectric materials and devices Liang, Xianfeng; Chen, Huaihao; Sun, Nian X. APL Materials, Vol. 9, Issue 4 https://doi.org/10.1063/5.0044532	journal	April 2021
Modulation of the magnetic domain size induced by an electric field Ando, F.; Kakizakai, H.; Koyama, T. Applied Physics Letters, Vol. 109, Issue 2 https://doi.org/10.1063/1.4955265	journal	July 2016
Room‐Temperature Ferroelectricity in Hexagonally Layered α‐In ₂ Se ₃ Nanoflakes down to the Monolayer Limit Xue, Fei; Hu, Weijin; Lee, Ko‐Chun Advanced Functional Materials, Vol. 28, Issue 50 https://doi.org/10.1002/adfm.201803738	journal	October 2018
Thickness-Dependent Thermal Conductivity of Suspended Two-Dimensional Single-Crystal In ₂ Se ₃ Layers Grown by Chemical Vapor Deposition Zhou, S.; Tao, X.; Gu, Y. The Journal of Physical Chemistry C, Vol. 120, Issue 9 https://doi.org/10.1021/acs.jpcc.5b10905	journal	February 2016
Surface magneto-optic Kerr effect Qiu, Z. Q.; Bader, S. D. Review of Scientific Instruments, Vol. 71, Issue 3 https://doi.org/10.1063/1.1150496	journal	March 2000
Lead-Free BiFeO3 Thin Film: Ferroelectric and Pyroelectric Properties Botea, Mihaela; Chirila, Cristina; Boni, Georgia Andra Electronic Materials, Vol. 3, Issue 2 https://doi.org/10.3390/electronicmat3020015	journal	April 2022
Nonvolatile magnetoelectric coupling in two-dimensional ferromagnetic-bilayer/ferroelectric van der Waals heterostructures Wang, Wenxuan; Sun, Wei; Li, Hang Nanoscale, Vol. 13, Issue 33 https://doi.org/10.1039/D1NR01093J	journal	January 2021
Ueber die durch Bewegung eines im homogenen electrischen Felde befindlichen Dielectricums hervorgerufene electrodynamische Kraft Röntgen, W. C. Annalen der Physik und Chemie, Vol. 271, Issue 10 https://doi.org/10.1002/andp.18882711003	journal	January 1888
Influence of piezoelectric strain on the Raman spectra of BiFeO ₃ films deposited on PMN-PT substrates Himcinschi, Cameliu; Guo, Er-Jia; Talkenberger, Andreas Applied Physics Letters, Vol. 108, Issue 4 https://doi.org/10.1063/1.4940973	journal	January 2016
Two-dimensional magnetic crystals and emergent heterostructure devices Gong, Cheng; Zhang, Xiang Science, Vol. 363, Issue 6428 https://doi.org/10.1126/science.aav4450	journal	February 2019
MATERIALS SCIENCE: The Renaissance of Magnetoelectric Multiferroics Spaldin, N. A. Science, Vol. 309, Issue 5733 https://doi.org/10.1126/science.1113357	journal	July 2005
Critical behavior of the van der Waals bonded ferromagnet ${Fe}_{3 - x} {GeTe}_{2}$ Liu, Yu; Ivanovski, V. N.; Petrovic, C. Physical Review B, Vol. 96, Issue 14 https://doi.org/10.1103/PhysRevB.96.144429	journal	October 2017
Gate-tunable room-temperature ferromagnetism in two-dimensional Fe3GeTe2 Deng, Yujun; Yu, Yijun; Song, Yichen Nature, Vol. 563, Issue 7729 https://doi.org/10.1038/s41586-018-0626-9	journal	October 2018
Nanoferronics is a winning combination Bibes, Manuel Nature Materials, Vol. 11, Issue 5 https://doi.org/10.1038/nmat3318	journal	April 2012
Raman spectroscopy of piezoelectrics Pezzotti, Giuseppe Journal of Applied Physics, Vol. 113, Issue 21 https://doi.org/10.1063/1.4803740	journal	June 2013
Large in-plane piezo-strain enhanced voltage control of magnetic anisotropy in Si-compatible multiferroic thin films Peng, Bin; Lu, Qi; Tang, Haowen Materials Horizons, Vol. 9, Issue 12 https://doi.org/10.1039/D2MH01020H	journal	January 2022
Fe3GeTe2 and Ni3GeTe2 – Two New Layered Transition-Metal Compounds: Crystal Structures, HRTEM Investigations, and Magnetic and Electrical Properties Deiseroth, Hans-Jörg; Aleksandrov, Krasimir; Reiner, Christof European Journal of Inorganic Chemistry, Vol. 2006, Issue 8 https://doi.org/10.1002/ejic.200501020	journal	April 2006
Lattice Dynamics, Phonon Chirality, and Spin–Phonon Coupling in 2D Itinerant Ferromagnet Fe ₃ GeTe ₂ Du, Luojun; Tang, Jian; Zhao, Yanchong Advanced Functional Materials, Vol. 29, Issue 48 https://doi.org/10.1002/adfm.201904734	journal	September 2019
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set Kresse, G.; Furthmüller, J. Physical Review B, Vol. 54, Issue 16, p. 11169-11186 https://doi.org/10.1103/PhysRevB.54.11169	journal	October 1996
First-principles calculation of the magnetocrystalline anisotropy energy of iron, cobalt, and nickel Daalderop, G. H. O.; Kelly, P. J.; Schuurmans, M. F. H. Physical Review B, Vol. 41, Issue 17 https://doi.org/10.1103/PhysRevB.41.11919	journal	June 1990
Large anomalous Hall current induced by topological nodal lines in a ferromagnetic van der Waals semimetal Kim, Kyoo; Seo, Junho; Lee, Eunwoo Nature Materials, Vol. 17, Issue 9 https://doi.org/10.1038/s41563-018-0132-3	journal	July 2018
Multiferroicity in atomic van der Waals heterostructures Gong, Cheng; Kim, Eun Mi; Wang, Yuan Nature Communications, Vol. 10, Issue 1 https://doi.org/10.1038/s41467-019-10693-0	journal	June 2019
Atomically thin α-In₂Se₃: an emergent two-dimensional room temperature ferroelectric semiconductor Li, Yue; Gong, Ming; Zeng, Hualing Journal of Semiconductors, Vol. 40, Issue 6 https://doi.org/10.1088/1674-4926/40/6/061002	journal	June 2019
Enhanced Piezoelectric Response of Layered In₂Se₃/MoS₂ Nanosheet-Based van der Waals Heterostructures Yuan, Shuoguo; Io, Weng Fu; Mao, Jianfeng ACS Applied Nano Materials, Vol. 3, Issue 12 https://doi.org/10.1021/acsanm.0c02513	journal	November 2020
Intercorrelated In-Plane and Out-of-Plane Ferroelectricity in Ultrathin Two-Dimensional Layered Semiconductor In ₂ Se ₃ Cui, Chaojie; Hu, Wei-Jin; Yan, Xingxu Nano Letters, Vol. 18, Issue 2 https://doi.org/10.1021/acs.nanolett.7b04852	journal	January 2018
Validity of the force theorem for magnetocrystalline anisotropy Wang, Xindong; Wang, Ding-sheng; Wu, Ruqian Journal of Magnetism and Magnetic Materials, Vol. 159, Issue 3 https://doi.org/10.1016/0304-8853(95)00936-1	journal	July 1996
Out-of-Plane Piezoelectricity and Ferroelectricity in Layered α-In ₂ Se ₃ Nanoflakes Zhou, Yu; Wu, Di; Zhu, Yihan Nano Letters, Vol. 17, Issue 9 https://doi.org/10.1021/acs.nanolett.7b02198	journal	August 2017
Semiempirical GGA-type density functional constructed with a long-range dispersion correction Grimme, Stefan Journal of Computational Chemistry, Vol. 27, Issue 15, p. 1787-1799 https://doi.org/10.1002/jcc.20495	journal	January 2006
Magnetism in two-dimensional van der Waals materials Burch, Kenneth S.; Mandrus, David; Park, Je-Geun Nature, Vol. 563, Issue 7729 https://doi.org/10.1038/s41586-018-0631-z	journal	October 2018
Tuning the Schottky barrier height in a multiferroic In₂Se₃/Fe₃GeTe₂ van der Waals heterojunction Javaid, M.; Taylor, Patrick D.; Tawfik, Sherif Abdulkader Nanoscale, Vol. 14, Issue 11 https://doi.org/10.1039/D1NR06906C	journal	January 2022
Multidirection Piezoelectricity in Mono- and Multilayered Hexagonal α-In ₂ Se ₃ Xue, Fei; Zhang, Junwei; Hu, Weijin ACS Nano, Vol. 12, Issue 5 https://doi.org/10.1021/acsnano.8b02152	journal	April 2018
Multiferroics progress and prospects in thin films Ramesh, R.; Spaldin, Nicola A. Nature Materials, Vol. 6, Issue 1, p. 21-29 https://doi.org/10.1038/nmat1805	journal	January 2007
Deterministic switching of ferromagnetism at room temperature using an electric field Heron, J. T.; Bosse, J. L.; He, Q. Nature, Vol. 516, Issue 7531 https://doi.org/10.1038/nature14004	journal	December 2014
Magnetoelectric Coupling at the Ni/Hf_0.5Zr_0.5O₂ Interface Dmitriyeva, Anna; Mikheev, Vitalii; Zarubin, Sergei ACS Nano, Vol. 15, Issue 9 https://doi.org/10.1021/acsnano.1c05001	journal	September 2021
Exchange Bias in Weakly Interlayer-Coupled van der Waals Magnet Fe ₃ GeTe ₂ Gweon, Hyung Keun; Lee, Sang Yeop; Kwon, Hee Young Nano Letters, Vol. 21, Issue 4 https://doi.org/10.1021/acs.nanolett.0c04434	journal	February 2021
Magnetic 2D materials and heterostructures Gibertini, M.; Koperski, M.; Morpurgo, A. F. Nature Nanotechnology, Vol. 14, Issue 5 https://doi.org/10.1038/s41565-019-0438-6	journal	May 2019
Lattice dynamics and phase transitions in ${Fe}_{3 - x} {GeTe}_{2}$ Milosavljević, A.; Šolajić, A.; Djurdjić-Mijin, S. Physical Review B, Vol. 99, Issue 21 https://doi.org/10.1103/PhysRevB.99.214304	journal	June 2019
Electric-field control of local ferromagnetism using a magnetoelectric multiferroic Chu, Ying-Hao; Martin, Lane W.; Holcomb, Mikel B. Nature Materials, Vol. 7, Issue 6, p. 478-482 https://doi.org/10.1038/nmat2184	journal	April 2008
Magnetic microstructure and magnetic properties of uniaxial itinerant ferromagnet Fe3GeTe2 León-Brito, N.; Bauer, E. D.; Ronning, F. Journal of Applied Physics, Vol. 120, Issue 8 https://doi.org/10.1063/1.4961592	journal	August 2016

Similar Records

Anisotropic magnetocaloric effect in Fe3−xGeTe2

Journal Article · Fri Sep 13 00:00:00 EDT 2019 · Scientific Reports · OSTI ID:1999702

Liu, Yu; Li, Jun; Tao, Jing; +2 more

Surface oxidation in a van der Waals ferromagnet Fe3-xGeTe2

Journal Article · Sat May 01 00:00:00 EDT 2021 · Current Applied Physics · OSTI ID:1999702

Kim, Dong Seob; Kee, Jung Yun; Lee, Ji-Eun; +10 more

Interlayer engineering of Fe ₃ GeTe ₂ : From 3D superlattice to 2D monolayer

Journal Article · Wed Jan 17 00:00:00 EST 2024 · Proceedings of the National Academy of Sciences of the United States of America · OSTI ID:1999702

Wu, Yecun; Wang, Bai Yang; Yu, Yijun; +12 more

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY

Title: Voltage control of magnetism in Fe3-xGeTe2/In2Se3 van der Waals ferromagnetic/ferroelectric heterostructures

Citation Formats

References (63)

Similar Records

Related Subjects