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Band energy dependence of defect formation in the topological semimetal Cd 3 As 2

Journal Article · · Physical Review. B

Cadmium arsenide (Cd3As2) is a prototypical Dirac semimetal that manifests topological properties in a three-dimensional (3D) bulk material. In defect-free Cd3As2, the Fermi level EF lies at a minimum in the density of states at the Dirac point, but experimentally it forms with excess electron carriers and an elevated EF, thereby masking the topological features. Here, to computationally study the self-doping of Cd3As2, we combine density functional theory (DFT) calculations for defect formation energies with quasiparticle self-consistent GW (QSGW) electronic structure calculations. We demonstrate an innate dependence of the point defect formation energies on carrier concentrations and use the QSGW calculated density of states to extrapolate formation energies to arbitrary electron concentrations. This approach allows the quantitative modeling of thermodynamic defect equilibria in topological semimetals and is used to predict how control of growth conditions might be utilized to achieve doping-neutral Cd3As2.

Research Organization:
National Renewable Energy Laboratory (NREL), Golden, CO (United States); Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE Office of Energy Efficiency and Renewable Energy (EERE)
Grant/Contract Number:
AC36-08GO28308; AC02-05CH11231
OSTI ID:
1998674
Alternate ID(s):
OSTI ID: 2221845
Report Number(s):
NREL/JA--5K00-84650; MainId:85423; UUID:6d259f65-ddde-40cf-a311-9b030bae7ffb; MainAdminID:70408
Journal Information:
Physical Review. B, Journal Name: Physical Review. B Journal Issue: 22 Vol. 107; ISSN 2469-9950
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English

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