Topology Hierarchy of Transition Metal Dichalcogenides Built from Quantum Spin Hall Layers
- Tsinghua Univ., Beijing (China); SLAC
- Wuhan Univ. (China)
- Peking Univ., Beijing (China)
- ShanghaiTech Univ. (China). Laboratory for Topological Physics
- ShanghaiTech Univ. (China)
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
- SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States). Stanford Synchrotron Radiation Lightsource (SSRL)
- Tsinghua Univ., Beijing (China)
- Nanjing Univ. (China)
- ShanghaiTech Univ. (China). Laboratory for Topological Physics; Univ. of Oxford (United Kingdom). Clarendon Lab.
The evolution of the physical properties of 2D material from monolayer limit to the bulk reveals unique consequences from dimension confinement and provides a distinct tuning knob for applications. Monolayer 1T'-phase transition metal dichalcogenides (1T'-TMDs) with ubiquitous quantum spin Hall (QSH) states are ideal 2D building blocks of various 3D topological phases. However, the stacking geometry has been previously limited to the bulk 1T'-WTe2 type. Here, the novel 2M-TMDs consisting of translationally stacked 1T'-monolayers are introduced as promising material platforms with tunable inverted bandgaps and interlayer coupling. By performing advanced polarization-dependent angle-resolved photoemission spectroscopy as well as first-principles calculations on the electronic structure of 2M-TMDs, a topology hierarchy is revealed: 2M-WSe2, MoS2, and MoSe2 are weak topological insulators (WTIs), whereas 2M-WS2 is a strong topological insulator (STI). Further demonstration of topological phase transitions by tunning interlayer distance indicates that band inversion amplitude and interlayer coupling jointly determine different topological states in 2M-TMDs. Finally, it is proposed that 2M-TMDs are parent compounds of various exotic phases including topological superconductors and promise great application potentials in quantum electronics due to their flexibility in patterning with 2D materials.
- Research Organization:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States); SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States). Stanford Synchrotron Radiation Lightsource (SSRL)
- Sponsoring Organization:
- National Key Research and Development Program of China; National Natural Science Foundation of China (NSFC); Science and Technology Commission of Shanghai Municipality (STCSM); USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities (SUF)
- Grant/Contract Number:
- AC02-05CH11231; AC02-76SF00515
- OSTI ID:
- 1998170
- Alternate ID(s):
- OSTI ID: 2228870
- Journal Information:
- Advanced Materials, Journal Name: Advanced Materials Journal Issue: 21 Vol. 35; ISSN 0935-9648
- Publisher:
- WileyCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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