Quantum Sensing of Insulator‐to‐Metal Transitions in a Mott Insulator

McLaughlin, Nathan J.; Kalcheim, Yoav; Suceava, Albert; Wang, Hailong; Schuller, Ivan K.; Du, Chunhui Rita

doi:10.1002/qute.202000142

Quantum Sensing of Insulator‐to‐Metal Transitions in a Mott Insulator

Journal Article · Fri Mar 26 00:00:00 EDT 2021 · Advanced Quantum Technologies

DOI:https://doi.org/10.1002/qute.202000142· OSTI ID:1997917

McLaughlin, Nathan J. ^[1]; Kalcheim, Yoav ^[1]; Suceava, Albert ^[1]; Wang, Hailong ^[2]; Schuller, Ivan K. ^[3]; Du, Chunhui Rita ^[3]

Department of Physics University of California San Diego La Jolla CA 92093 USA
Center for Memory and Recording Research University of California San Diego La Jolla CA 92093 USA
Department of Physics University of California San Diego La Jolla CA 92093 USA, Center for Memory and Recording Research University of California San Diego La Jolla CA 92093 USA

Abstract

Nitrogen vacancy (NV) centers, optically active atomic defects in diamond, have attracted tremendous interest for quantum sensing, network, and computing applications due to their excellent quantum coherence and remarkable versatility in a real, ambient environment. Taking advantage of these strengths, this paper reports on NV‐based local sensing of the electrically driven insulator‐to‐metal transition (IMT) in a proximal Mott insulator. The resistive switching properties of both pristine and ion‐irradiated VO ₂ thin film devices are studied by performing optically detected NV electron spin resonance measurements. These measurements probe the local temperature and magnetic field in electrically biased VO ₂ devices, which are in agreement with the global transport measurement results. In pristine devices, the electrically driven IMT proceeds through Joule heating up to the transition temperature while in ion‐irradiated devices, the transition occurs nonthermally, well below the transition temperature. The results provide direct evidence for nonthermal electrically induced IMT in a Mott insulator, highlighting the significant opportunities offered by NV quantum sensors in exploring nanoscale thermal and electrical behaviors in Mott materials.

View Accepted Manuscript (Publisher)

Sponsoring Organization:: USDOE

Grant/Contract Number:: SC0019273

OSTI ID:: 1997917

Alternate ID(s):: OSTI ID: 1852974

Journal Information:: Advanced Quantum Technologies, Journal Name: Advanced Quantum Technologies Journal Issue: 5 Vol. 4; ISSN 2511-9044

Publisher:: Wiley Blackwell (John Wiley & Sons)Copyright Statement

Country of Publication:: Germany

Language:: English

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