Non-thermal resistive switching in Mott insulator nanowires

Kalcheim, Yoav; Camjayi, Alberto; del Valle, Javier; Salev, Pavel; Rozenberg, Marcelo; Schuller, Ivan K.

doi:10.1038/s41467-020-16752-1

Non-thermal resistive switching in Mott insulator nanowires

Journal Article · Fri Jun 12 00:00:00 EDT 2020 · Nature Communications

DOI:https://doi.org/10.1038/s41467-020-16752-1· OSTI ID:1633116

Kalcheim, Yoav; Camjayi, Alberto; del Valle, Javier; Salev, Pavel; Rozenberg, Marcelo; Schuller, Ivan K.

Abstract

Resistive switching can be achieved in a Mott insulator by applying current/voltage, which triggers an insulator-metal transition (IMT). This phenomenon is key for understanding IMT physics and developing novel memory elements and brain-inspired technology. Despite this, the roles of electric field and Joule heating in the switching process remain controversial. Using nanowires of two archetypal Mott insulators—VO ₂ and V ₂ O ₃ we unequivocally show that a purely non-thermal electrical IMT can occur in both materials. The mechanism behind this effect is identified as field-assisted carrier generation leading to a doping driven IMT. This effect can be controlled by similar means in both VO ₂ and V ₂ O ₃ , suggesting that the proposed mechanism is generally applicable to Mott insulators. The energy consumption associated with the non-thermal IMT is extremely low, rivaling that of state-of-the-art electronics and biological neurons. These findings pave the way towards highly energy-efficient applications of Mott insulators.

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Research Organization:: Univ. of California, San Diego, CA (United States)

Sponsoring Organization:: USDOE; USDOE Office of Science (SC)

Grant/Contract Number:: SC0019273

OSTI ID:: 1633116

Alternate ID(s):: OSTI ID: 1803655

Journal Information:: Nature Communications, Journal Name: Nature Communications Journal Issue: 1 Vol. 11; ISSN 2041-1723

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United Kingdom

Language:: English

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