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Sampling on NISQ Devices: "Who’s the Fairest One of All?"

Conference · · 2021 IEEE International Conference on Quantum Computing and Engineering (QCE)

Modern NISQ devices are subject to a variety of biases and sources of noise that degrade the solution quality of computations carried out on these devices. A natural question that arises in the NISQ era, is how fairly do these devices sample ground state solutions. To this end, we run five fair sampling problems (each with at least three ground state solutions) that are based both on quantum annealing and, on the Grover Mixer, -QAOA algorithm for gate-based NISQ hardware. In particular, we use seven IBM Q devices, the Aspen-9 Rigetti device, the IonQ device, and three D-Wave quantum annealers. For each of the fair sampling problems, we measure the ground state probability, the relative fairness of the frequency of each ground state solution with respect to the other ground state solutions, and the aggregate error as given by each hardware provider. Overall, our results show that NISQ devices do not achieve fair sampling yet. Furthermore, we also observe differences in the software stack with a particular focus on compilation techniques that illustrate what work will still need to be done to achieve a seamless integration of frontend (i.e., quantum circuit description) and backend compilation.

Research Organization:
Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA); USDOE Laboratory Directed Research and Development (LDRD) Program
DOE Contract Number:
89233218CNA000001; 20200671DI
OSTI ID:
1994116
Report Number(s):
LA-UR-21-20101
Journal Information:
2021 IEEE International Conference on Quantum Computing and Engineering (QCE), Conference: 2021 IEEE International Conference on Quantum Computing and Engineering, Broomfield, CO (United States), 17-22 Oct 2021; Related Information: https://ieeexplore.ieee.org/document/9605329/keywords#keywords
Publisher:
IEEE
Country of Publication:
United States
Language:
English

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