Post-deposition Metal Halide Treatment of CuGaSe2 for Photovoltaic Application

Poudel, Deewakar; Belfore, Benjamin; Masters, Adam; Palmiotti, Elizabeth; Rockett, Angus; Marsillac, Sylvain

doi:10.1109/pvsc48317.2022.9938904

Post-deposition Metal Halide Treatment of CuGaSe₂ for Photovoltaic Application

Conference · Sun Jun 05 04:00:00 EDT 2022 · 2022 IEEE 49th Photovoltaics Specialists Conference (PVSC)

DOI:https://doi.org/10.1109/pvsc48317.2022.9938904· OSTI ID:1991385

Poudel, Deewakar ^[1]; Belfore, Benjamin ^[2]; Masters, Adam ^[2]; Palmiotti, Elizabeth ^[3]; Rockett, Angus ^[3]; Marsillac, Sylvain ^[2]

Old Dominion University, Norfolk, VA (United States); Colorado School of Mines
Old Dominion University, Norfolk, VA (United States)
Colorado School of Mines, Golden, CO (United States)

Copper gallium diselenide (CGS) semiconductor thin films were deposited by three-stage thermal co-evaporation process. Post-deposition treatments and recrystallization were performed at various AgBr doses of 40 mg, 60 mg, and 80 mg after the 2^nd stage. The changes in surface morphology were confirmed by SEM. The electrical properties were also modified, as the resistivity of the film decreases with increasing doses. Here, the device performance after the treatment did not change as expected, as the overall device performance only slightly increases in the case of 60 mg of AgBr. Substantial changes in the fabrication process will therefore be required for better device results.

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Research Organization:: Colorado School of Mines, Golden, CO (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office

DOE Contract Number:: EE0007551

OSTI ID:: 1991385

Conference Information:: Journal Name: 2022 IEEE 49th Photovoltaics Specialists Conference (PVSC)

Country of Publication:: United States

Language:: English

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14 SOLAR ENERGY
AgBr
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recrystallization