Effect of Metal Halides Treatment on High Throughput Low Temperature CIGS Solar Cells

Poudel, Deewakar; Belfore, Benjamin; Masters, Adam; Rockett, Angus; Marsillac, Sylvain

doi:10.1109/pvsc48317.2022.9938873

Effect of Metal Halides Treatment on High Throughput Low Temperature CIGS Solar Cells

Conference · 05 June 2022 · 2022 IEEE 49th Photovoltaics Specialists Conference (PVSC)

DOI:https://doi.org/10.1109/pvsc48317.2022.9938873· OSTI ID:1991379

Poudel, Deewakar ^[1]; Belfore, Benjamin ^[1]; Masters, Adam ^[1]; Rockett, Angus ^[2]; Marsillac, Sylvain ^[1]

Old Dominion University, Norfolk, VA (United States)
Colorado School of Mines, Golden, CO (United States)

Copper indium gallium diselenide (CIGS) semiconductor thin films were deposited at high rate and low temperature using single-stage thermal co-evaporation process on molybdenum back contact. A post deposition treatment was done by flashing AgBr at 350 ºC to induce recrystallization. Changes in morphology were confirmed by SEM, with an observed increase in grain size, as well as by XRD measurements, with a decrease in FWHM. Device results show an improvement of the performance after the AgBr vapor treatment, as all the photovoltaic parameters enhanced. Altogether, AgBr seems to be a suitable transport agent and beneficial for device fabrication.

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Research Organization:: Colorado School of Mines, Golden, CO (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office

DOE Contract Number:: EE0007551

OSTI ID:: 1991379

Journal Information:: 2022 IEEE 49th Photovoltaics Specialists Conference (PVSC), Conference: 2022 IEEE 49. Photovoltaics Specialists Conference (PVSC) , Philadelphia, PA (United States), 5-10 Jun 2022

Country of Publication:: United States

Language:: English

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