Ex-Situ Recrystallization of CIGS via Metal Halides

Belfore, Benjamin; Poudel, Deewakar; Palmiotti, Elizabeth; Rajan, Grace; Karki, Shankar; Rockett, Angus; Marsillac, Sylvain

doi:10.1109/pvsc45281.2020.9300941

Ex-Situ Recrystallization of CIGS via Metal Halides

Journal Article · Sun Jun 14 00:00:00 EDT 2020 · Conference Record of the IEEE Photovoltaic Specialists Conference

DOI:https://doi.org/10.1109/pvsc45281.2020.9300941· OSTI ID:1991341

Belfore, Benjamin ^[1]; Poudel, Deewakar ^[2]; Palmiotti, Elizabeth ^[3]; Rajan, Grace ^[2]; Karki, Shankar ^[2]; Rockett, Angus ^[3]; Marsillac, Sylvain ^[2]

Old Dominion University, Norfolk, VA (United States); Colorado School of Mines
Old Dominion University, Norfolk, VA (United States)
Colorado School of Mines, Golden, CO (United States)

Post Deposition Treatments (PDT) have been key to improving the efficiency of CIGS solar cells. While efficiency has continued to increase, for thermal evaporation processes, high substrate temperature and low deposition rates are a necessity. For many chemical processes, chemical vapor transport techniques can be used to both purify and grow both large and pure crystalline compounds. This is often done with a halide species and temperature. Here, by using the substituent metals of CIGS in confluence with a halide, we explored the possibility to grow a CIGS layer at low temperature and fast rate while still having sufficiently high efficiency.

View Accepted Manuscript (DOE)

Research Organization:: Colorado School of Mines, Golden, CO (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office

Grant/Contract Number:: EE0007551

OSTI ID:: 1991341

Journal Information:: Conference Record of the IEEE Photovoltaic Specialists Conference, Journal Name: Conference Record of the IEEE Photovoltaic Specialists Conference Vol. 2020; ISSN 0160-8371

Publisher:: IEEECopyright Statement

Country of Publication:: United States

Language:: English

References (23)

Through-the-glass spectroscopic ellipsometry for analysis of CdTe thin-film solar cells in the superstrate configuration: Through-the-glass spectroscopic ellipsometry Koirala, Prakash; Li, Jian; Yoon, Heayoung P. Progress in Photovoltaics: Research and Applications, Vol. 24, Issue 8 https://doi.org/10.1002/pip.2759	journal	February 2016
Parameterized complex dielectric functions of CuIn _1−x Ga _x Se ₂ : applications in optical characterization of compositional non-uniformities and depth profiles in materials and solar cells : Parameterized complex dielectric functions of CuIn Aryal, Puruswottam; Ibdah, Abdel-Rahman; Pradhan, Puja Progress in Photovoltaics: Research and Applications, Vol. 24, Issue 9 https://doi.org/10.1002/pip.2774	journal	April 2016
Spectroscopic ellipsometry studies of In ₂ S ₃ top window and Mo back contacts in chalcopyrite photovoltaics technology Marsillac, S.; Barreau, N.; Khatri, H. physica status solidi c, Vol. 5, Issue 5 https://doi.org/10.1002/pssc.200777889	journal	May 2008
Real time spectroscopic ellipsometry of CuInSe2: Growth dynamics, dielectric function, and its dependence on temperature Begou, Thomas; Walker, James D.; Attygalle, Dinesh physica status solidi (RRL) - Rapid Research Letters, Vol. 5, Issue 7 https://doi.org/10.1002/pssr.201105204	journal	May 2011
Change in the type of majority carriers in disordered lnxSe100−x thin-film alloys Marsillac, S.; Bernéde, J. C.; Conan, A. Journal of Materials Science, Vol. 31, Issue 3 https://doi.org/10.1007/BF00367872	journal	February 1996
A new simple technique to obtain In2Se3 polycrystalline thin films Marsillac, S.; Bernede, Jc; Ny, RLe Vacuum, Vol. 46, Issue 11 https://doi.org/10.1016/0042-207X(95)00020-8	journal	November 1995
Study of the new β-In2S3 containing Na thin films. Part II: Optical and electrical characterization of thin films Barreau, N.; Bernède, J. C.; Marsillac, S. Journal of Crystal Growth, Vol. 241, Issue 1-2 https://doi.org/10.1016/S0022-0248(02)01243-5	journal	May 2002
Band alignment at the interface of a SnO2/γ-In2Se3 heterojunction Bernède, J. C.; Marsillac, S. Materials Research Bulletin, Vol. 32, Issue 9 https://doi.org/10.1016/S0025-5408(97)00090-1	journal	September 1997
Optical properties of CuAlX2 (X=Se, Te) thin films obtained by annealing of copper, aluminum and chalcogen layers sequentially deposited El Moctar, C. O.; Kambas, K.; Marsillac, S. Thin Solid Films, Vol. 371, Issue 1-2 https://doi.org/10.1016/S0040-6090(00)00985-8	journal	August 2000
Band alignment at β-In2S3/TCO interface Bernède, J. C.; Barreau, N.; Marsillac, S. Applied Surface Science, Vol. 195, Issue 1-4 https://doi.org/10.1016/S0169-4332(02)00551-2	journal	July 2002
Electrical properties of γ-In2Se3 layers synthesized by solid state reaction between In and Se thin films Bernède, J. C.; Marsillac, S.; Conan, A. Materials Chemistry and Physics, Vol. 48, Issue 1 https://doi.org/10.1016/S0254-0584(97)80068-5	journal	March 1997
Optical properties of large band gap β-In2S3−3xO3x compounds obtained by physical vapour deposition Robles, R.; Barreau, N.; Vega, A. Optical Materials, Vol. 27, Issue 4 https://doi.org/10.1016/j.optmat.2004.03.015	journal	January 2005
Real time spectroscopic ellipsometry of Ag/ZnO and Al/ZnO interfaces for back-reflectors in thin film Si:H photovoltaics Dahal, Lila Raj; Sainju, Deepak; Podraza, N. J. Thin Solid Films, Vol. 519, Issue 9 https://doi.org/10.1016/j.tsf.2010.11.093	journal	February 2011
Vapor Pressures of Gallium Trifluoride, Trichloride, and Triiodide and Their Standard Sublimation Enthalpies Brunetti, Bruno; Piacente, Vincenzo; Scardala, Paolo Journal of Chemical & Engineering Data, Vol. 55, Issue 1 https://doi.org/10.1021/je900276q	journal	August 2009
Evolution of the band structure of β-In2S3−3xO3x buffer layer with its oxygen content Barreau, N.; Marsillac, S.; Bernède, J. C. Journal of Applied Physics, Vol. 93, Issue 9 https://doi.org/10.1063/1.1565823	journal	May 2003
Study of a growth instability of γ-In2Se3 Amory, C.; Bernède, J. C.; Marsillac, S. Journal of Applied Physics, Vol. 94, Issue 10 https://doi.org/10.1063/1.1622117	journal	October 2003
Electronic and structural properties of molybdenum thin films as determined by real-time spectroscopic ellipsometry Walker, J. D.; Khatri, H.; Ranjan, V. Applied Physics Letters, Vol. 94, Issue 14 https://doi.org/10.1063/1.3117222	journal	April 2009
Large-Area Compositional Mapping of Cu(In$_{1-x}$Ga $_{x}$)Se $_{2}$ Materials and Devices with Spectroscopic Ellipsometry Aryal, Puruswottam; Attygalle, Dinesh; Pradhan, Puja IEEE Journal of Photovoltaics, Vol. 3, Issue 1 https://doi.org/10.1109/JPHOTOV.2012.2216513	journal	January 2013
In Situ and Ex Situ Investigations of KF Postdeposition Treatment Effects on CIGS Solar Cells Karki, Shankar; Paul, Pran K.; Rajan, Grace IEEE Journal of Photovoltaics, Vol. 7, Issue 2 https://doi.org/10.1109/JPHOTOV.2016.2637659	journal	March 2017
Analysis of Recombination Mechanisms in RbF-Treated CIGS Solar Cells Karki, Shankar; Marsillac, Sylvain; Paul, Pran IEEE Journal of Photovoltaics, Vol. 9, Issue 1 https://doi.org/10.1109/JPHOTOV.2018.2877596	journal	January 2019
The effect of cadmium chloride treatment on close spaced sublimated cadmium telluride thin film solar cells Abbas, A.; West, G. D.; Bowers, J. W. 2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2 https://doi.org/10.1109/PVSC-Vol2.2012.6656778	conference	June 2012
Post-Deposition Recrystallization of Chloride Treated Cu(In x Ga (1-x)) Se 2 Thin-Film Solar Cells Palmiotti, Elizabeth; Soltanmohammad, Sina; Rockett, Angus 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC) https://doi.org/10.1109/PVSC.2018.8547595	conference	June 2018
In Situ and Ex Situ Studies of Molybdenum Thin Films Deposited by rf and dc Magnetron Sputtering as a Back Contact for CIGS Solar Cells Aryal, K.; Khatri, H.; Collins, R. W. International Journal of Photoenergy, Vol. 2012 https://doi.org/10.1155/2012/723714	journal	January 2012

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14 SOLAR ENERGY
CIGS
metal halides
recrystallization

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