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A thermodynamic evaluation of metal halides for the recrystallization of Cu(In,Ga)Se2

Journal Article · · Progress in Photovoltaics
DOI:https://doi.org/10.1002/pip.3604· OSTI ID:1991292
 [1];  [2];  [3]
  1. Colorado School of Mines, Golden, CO (United States); Colorado School of Mines
  2. Old Dominion University, Norfolk, VA (United States)
  3. Colorado School of Mines, Golden, CO (United States)
CdTe films are deposited at low temperatures and recrystallized to photovoltaic device quality using CdCl2 treatments, leading to competitive manufacturing costs. Cu(In,Ga)Se2 (CIGS) typically requires high-temperature, low-rate depositions to produce high-efficiency devices, resulting in higher costs. A similar metal halide treatment of CIGS has been demonstrated by us previously for some metal halide sources. To understand and optimize the process, a thermodynamic evaluation of candidate metal halides for such treatments is presented as a guide for their selection. By comparing bond dissociation energies, mono- and di-halide compounds are proposed to be ideal compounds to act as transport agents. Known recrystallization and temperature reduction benefits by Ag alloying suggests that Ag-halides should be used to aid transport of all species. The high vapor pressure and mobility of Ga compounds still poses a problem for metal halide treatment resulting in Ga etching and removal of intentional Ga gradients. Less severe but similar issues with In compounds may occur. As a result, Cu compounds have low vapor pressures which may limit transport, however, Cu is highly mobile in CIGS and recrystallization still occurs.
Research Organization:
Colorado School of Mines, Golden, CO (United States)
Sponsoring Organization:
USDOE; USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
Grant/Contract Number:
EE0007551
OSTI ID:
1991292
Alternate ID(s):
OSTI ID: 1874691
Journal Information:
Progress in Photovoltaics, Journal Name: Progress in Photovoltaics Journal Issue: 1 Vol. 31; ISSN 1062-7995
Publisher:
WileyCopyright Statement
Country of Publication:
United States
Language:
English

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