Pulsed laser induced atomic layer etching of silicon

Eliceiri, Matthew; Rho, Yoonsoo; Li, Runxuan; Grigoropoulos, Costas P.

doi:10.1116/6.0002399

Pulsed laser induced atomic layer etching of silicon

Journal Article · Tue Feb 28 00:00:00 EST 2023 · Journal of Vacuum Science and Technology A

DOI:https://doi.org/10.1116/6.0002399· OSTI ID:1983726

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Univ. of California, Berkeley, CA (United States)
Univ. of California, Berkeley, CA (United States); Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)

Here, we demonstrate the laser mediated atomic layer etching (ALEt) of silicon. Using a nanosecond pulsed 266 nm laser focused loosely over and in a parallel configuration to the surface of the silicon, we dissociate Cl₂ gas to induce chlorination. Then, we use pulsed picosecond irradiation to remove the chlorinated layer. Subsequently, we perform continuous wave (CW) laser annealing to eliminate amorphization caused by the picosecond laser etching. Based on atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS), we observed strong evidence of chlorination and digital etching at 0.85 nm etching per cycle with good uniformity.

View Accepted Manuscript (DOE)

Research Organization:: Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)

Sponsoring Organization:: National Science Foundation (NSF); USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC52-07NA27344

OSTI ID:: 1983726

Report Number(s):: LLNL-JRNL-844027; 1066422

Journal Information:: Journal of Vacuum Science and Technology A, Journal Name: Journal of Vacuum Science and Technology A Journal Issue: 2 Vol. 41; ISSN 0734-2101

Publisher:: American Vacuum Society / AIPCopyright Statement

Country of Publication:: United States

Language:: English

References (29)

Laser-induced chemical etching of silicon in chlorine atmosphere Kullmer, R.; B�uerle, D. Applied Physics A Solids and Surfaces, Vol. 43, Issue 3 https://doi.org/10.1007/BF00615982	journal	July 1987
Comparison of atomic scale etching of poly-Si in inductively coupled Ar and He plasmas Yun, Hyung Jin; Kim, Tae Ho; Shin, Chee Burm Korean Journal of Chemical Engineering, Vol. 24, Issue 4 https://doi.org/10.1007/s11814-007-0023-9	journal	July 2007
Substrate orientation dependence of self-limited atomic-layer etching of Si with chlorine adsorption and low-energy Ar+ irradiation Suzue, Koji; Matsuura, Takashi; Murota, Junichi Applied Surface Science, Vol. 82-83 https://doi.org/10.1016/0169-4332(94)90252-6	journal	December 1994
Layer-by-layer etching of Cl-adsorbed silicon surfaces by low energy Ar+ ion irradiation Kim, Bum-Jun; Chung, Saehoon; Cho, Sung M. Applied Surface Science, Vol. 187, Issue 1-2 https://doi.org/10.1016/S0169-4332(01)00826-1	journal	February 2002
A laser-assisted chlorination process for reversible writing of doping patterns in graphene Rho, Yoonsoo; Lee, Kyunghoon; Wang, Letian Nature Electronics, Vol. 5, Issue 8 https://doi.org/10.1038/s41928-022-00801-2	journal	August 2022
Laser bilayer etching of GaAs surfaces Maki, P. A.; Ehrlich, D. J. Applied Physics Letters, Vol. 55, Issue 2 https://doi.org/10.1063/1.102097	journal	July 1989
Self‐limited layer‐by‐layer etching of Si by alternated chlorine adsorption and Ar ⁺ ion irradiation Matsuura, Takashi; Murota, Junichi; Sawada, Yasuji Applied Physics Letters, Vol. 63, Issue 20 https://doi.org/10.1063/1.110340	journal	November 1993
Laser‐induced etching of Si with chlorine Baller, T.; Oostra, D. J.; de Vries, A. E. Journal of Applied Physics, Vol. 60, Issue 7 https://doi.org/10.1063/1.337142	journal	October 1986
Mode of growth and microstructure of polycrystalline silicon obtained by solid‐phase crystallization of an amorphous silicon film Haji, L.; Joubert, P.; Stoemenos, J. Journal of Applied Physics, Vol. 75, Issue 8 https://doi.org/10.1063/1.356014	journal	April 1994
Excimer laser-induced temperature field in melting and resolidification of silicon thin films Hatano, Mutsuko; Moon, Seungjae; Lee, Minghong Journal of Applied Physics, Vol. 87, Issue 1 https://doi.org/10.1063/1.371823	journal	January 2000
Fast (tens to hundreds of eV) neutral beams for materials processing Economou, Demetre J. Journal of Physics D: Applied Physics, Vol. 41, Issue 2 https://doi.org/10.1088/0022-3727/41/2/024001	journal	January 2008
Rapid Melting and Regrowth Velocities in Silicon Heated by Ultraviolet Picosecond Laser Pulses Bucksbaum, Philip H.; Bokor, Jeffrey Physical Review Letters, Vol. 53, Issue 2 https://doi.org/10.1103/PhysRevLett.53.182	journal	July 1984
Plasma atomic layer etching using conventional plasma equipment Agarwal, Ankur; Kushner, Mark J. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 27, Issue 1 https://doi.org/10.1116/1.3021361	journal	January 2009
MD simulations of low energy Cl _x ⁺ ions interaction with ultrathin silicon layers for advanced etch processes Brichon, Paulin; Despiau-Pujo, Emilie; Joubert, Olivier Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 32, Issue 2 https://doi.org/10.1116/1.4827016	journal	March 2014
Overview of atomic layer etching in the semiconductor industry Kanarik, Keren J.; Lill, Thorsten; Hudson, Eric A. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 33, Issue 2 https://doi.org/10.1116/1.4913379	journal	March 2015
Molecular dynamics simulation of atomic layer etching of silicon Athavale, Satish D.; Economou, Demetre J. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 13, Issue 3 https://doi.org/10.1116/1.579659	journal	May 1995
Layer-by-layer etching of GaAs (110) with halogenation and pulsed-laser irradiation Han, B. Y.; Cha, C. Y.; Weaver, J. H. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 16, Issue 2 https://doi.org/10.1116/1.581048	journal	March 1998
Controllable layer-by-layer etching of III–V compound semiconductors with an electron cyclotron resonance source Ko, K. K. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 11, Issue 6 https://doi.org/10.1116/1.586889	journal	November 1993
Realization of atomic layer etching of silicon Athavale, Satish D. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 14, Issue 6 https://doi.org/10.1116/1.588651	journal	November 1996
Molecular dynamics study of silicon atomic layer etching by chlorine gas and argon ions Vella, Joseph R.; Humbird, David; Graves, David B. Journal of Vacuum Science & Technology B, Vol. 40, Issue 2 https://doi.org/10.1116/6.0001681	journal	March 2022
Photo-Excited Etching of Poly-Crystalline and Single-Crystalline Silicon in Cl₂Atmosphere Okano, Haruo; Horiike, Yasuhiro; Sekine, Makoto Japanese Journal of Applied Physics, Vol. 24, Issue Part 1, No. 1 https://doi.org/10.1143/JJAP.24.68	journal	January 1985
Atomic Layer Controlled Digital Etching of Silicon Sakaue, Hiroyuki; Iseda, Seiji; Asami, Kazushi Japanese Journal of Applied Physics, Vol. 29, Issue Part 1, No. 11 https://doi.org/10.1143/JJAP.29.2648	journal	November 1990
Atomic Layer Etching of Silicon by Thermal Desorption Method Imai, Shigeru; Haga, Takeo; Matsuzaki, Osamu Japanese Journal of Applied Physics, Vol. 34, Issue Part 1, No. 9A https://doi.org/10.1143/JJAP.34.5049	journal	September 1995
Precise Depth Control of Silicon Etching Using Chlorine Atomic Layer Etching Park, Sang-Duk; Min, Kyung-Suk; Yoon, Byoung-Young Japanese Journal of Applied Physics, Vol. 44, Issue 1A https://doi.org/10.1143/JJAP.44.389	journal	January 2005
Atomic Layer Etching of Si(100) and Si(111) Using Cl[sub 2] and Ar Neutral Beam Park, S. D.; Lee, D. H.; Yeom, G. Y. Electrochemical and Solid-State Letters, Vol. 8, Issue 8 https://doi.org/10.1149/1.1938848	journal	January 2005
Surface Roughness Variation during Si Atomic Layer Etching by Chlorine Adsorption Followed by an Ar Neutral Beam Irradiation Park, S. D.; Oh, C. K.; Lee, D. H. Electrochemical and Solid-State Letters, Vol. 8, Issue 11 https://doi.org/10.1149/1.2073667	journal	January 2005
Surface Analysis of Atomic-Layer-Etched Silicon by Chlorine Oh, C. K.; Park, S. D.; Lee, H. C. Electrochemical and Solid-State Letters, Vol. 10, Issue 3 https://doi.org/10.1149/1.2426414	journal	January 2007
Atomic Layer Etching at the Tipping Point: An Overview Oehrlein, G. S.; Metzler, D.; Li, C. ECS Journal of Solid State Science and Technology, Vol. 4, Issue 6 https://doi.org/10.1149/2.0061506jss	journal	January 2015
High-rate laser microprocessing using a polygon scanner system Loeschner, Udo; Schille, Joerg; Streek, Andre Journal of Laser Applications, Vol. 27, Issue S2 https://doi.org/10.2351/1.4906473	journal	February 2015

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42 ENGINEERING
X-ray photoelectron spectroscopy
annealing
atomic force microscopy
atomic-layer etching
heat transfer
lasers

Pulsed laser induced atomic layer etching of silicon

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