Atomic layer etching with pulsed plasmas
Patent
·
OSTI ID:1600433
A system and method for rapid atomic layer etching (ALET) including a pulsed plasma source, with a spiral coil electrode, a cooled Faraday shield, a counter electrode disposed at the top of the tube, a gas inlet and a reaction chamber including a substrate support and a boundary electrode. The method includes positioning an etchable substrate in a plasma etching chamber, forming a product layer on the surface of the substrate, removing a portion of the product layer by pulsing a plasma source, then repeating the steps of forming a product layer and removing a portion of the product layer to form an etched substrate.
- Research Organization:
- Univ. of Houston, TX (United States)
- Sponsoring Organization:
- USDOE; National Science Foundation (NSF)
- Assignee:
- University of Houston (Houston, TX)
- Patent Number(s):
- 10,515,782
- Application Number:
- 15/949,274
- OSTI ID:
- 1600433
- Country of Publication:
- United States
- Language:
- English
Plasma atomic layer etching using conventional plasma equipment
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journal | January 2009 |
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