Ultraefficient resistance switching between charge ordered phases in 1T-TaS2 with a single picosecond electrical pulse

Venturini, Rok; Mraz, Anže; Vaskivskyi, Igor; Vaskivskyi, Yevhenii; Svetin, Damjan; Mertelj, Tomaž; Pavlovič, Leon; Cheng, Jing; Chen, Genyu; Amarasinghe, Priyanthi; Qadri, Syed B.; Trivedi, Sudhir B.; Sobolewski, Roman; Mihailovic, Dragan

doi:10.1063/5.0096850

Title: Ultraefficient resistance switching between charge ordered phases in 1T-TaS₂ with a single picosecond electrical pulse

Journal Article · Thu Jun 23 00:00:00 EDT 2022 · Applied Physics Letters

DOI:https://doi.org/10.1063/5.0096850· OSTI ID:1979107

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^[1]; Svetin, Damjan ^[3];

^[2]; Pavlovič, Leon ^[4];

^[5];

^[5]; Amarasinghe, Priyanthi ^[6];

^[7]; Trivedi, Sudhir B. ^[6];

^[5];

^[3]

Jozef Stefan Inst. (IJS), Ljubljana (Slovenia); Univ. of Ljubljana (Slovenia)
Jozef Stefan Inst. (IJS), Ljubljana (Slovenia)
Jozef Stefan Inst. (IJS), Ljubljana (Slovenia); CENN Nanocenter, Ljubljiana (Slovenia)
ELEP Electronics, Ljubljana (Slovenia)
Univ. of Rochester, NY (United States)
Brimrose Technology Corporation, Sparks, MD (United States)
Naval Research Lab. (NRL), Washington, DC (United States)

Progress in high-performance computing demands significant advances in memory technology. Among novel memory technologies that promise efficient device operation on a sub-ns timescale, resistance switching between charge ordered phases of 1T-TaS₂ has shown to be potentially useful for development of high-speed, energy efficient nonvolatile memory devices. Measurement of the electrical operation of such devices in the picosecond regime is technically challenging and hitherto still largely unexplored. Here, we use an optoelectronic “laboratory-on-a-chip” experiment for measurement of ultrafast memory switching, enabling accurate measurement of electrical switching parameters with 100 fs temporal resolution. Photoexcitation and electro-optic sampling on a (Cd,Mn)Te substrate are used to generate and, subsequently, measure electrical pulse propagation with intra-band excitation and sub-gap probing, respectively. We demonstrate high contrast nonvolatile resistance switching from high to low resistance states of a 1T-TaS₂ device using single sub-2ps electrical pulses. Using detailed modeling, we find that the switching energy density per unit area is exceptionally small, E_A=9.4 fJ/μm². Finally, the speed and energy efficiency of an electronic “write” process place the 1T-TaS₂ devices into a category of their own among new generation nonvolatile memory devices.

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Research Organization:: Brimrose Technology Corporation, Sparks, MD (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Office of SBIR/STTR Programs (SBIR/STTR); Slovenian Research Agency; Slovene Ministry of Science; European Research Council (ERC); USDOE

Grant/Contract Number:: SC0021468; P1-0040; N1-0092; J1-2455; PR-10496; PR-08972; I0-0005; Raziskovalci-2.1-IJS-952005; GA767176

OSTI ID:: 1979107

Alternate ID(s):: OSTI ID: 1873603

Journal Information:: Applied Physics Letters, Vol. 120, Issue 25; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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