Influence of strain and dislocations on GaSb/GaAs quantum dots: From nested to staggered band alignment

McGuigan, B. C.; Chang, A. S.; Greenhill, C.; Johnson, H. T.; Goldman, R. S.

doi:10.1063/5.0070657

Title: Influence of strain and dislocations on GaSb/GaAs quantum dots: From nested to staggered band alignment

Journal Article · Fri Feb 25 00:00:00 EST 2022 · Journal of Applied Physics

DOI:https://doi.org/10.1063/5.0070657· OSTI ID:1978975

McGuigan, B. C. ^[1];

^[2];

^[2]; Johnson, H. T. ^[1];

^[2]

University of Illinois at Urbana-Champaign, IL (United States)
University of Michigan, Ann Arbor, MI (United States)

We investigate the influence of strain and dislocations on band alignment in GaSb/GaAs quantum dot systems. Composition profiles from cross-sectional scanning tunneling microscopy images are interpolated onto a finite element mesh in order to calculate the distribution of local elastic strain, which is converted to a spatially varying band alignment using deformation potential theory. Our calculations predict that dislocation-induced strain relaxation and charging lead to significant local variations in band alignment. Furthermore, misfit strain induces a transition from a nested (type I) to a staggered (type II) band alignment. Although dislocation-induced strain relaxation prevents the type I to type II transition, electrostatic charging at dislocations induces the staggered band alignment once again.

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Research Organization:: Univ. of Michigan, Ann Arbor, MI (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF)

Grant/Contract Number:: FG02-06ER46339; DGE-1256260; ECCS-1610362; FG02-06EF46339

OSTI ID:: 1978975

Alternate ID(s):: OSTI ID: 1846471

Journal Information:: Journal of Applied Physics, Vol. 131, Issue 8; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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