The discovery and development of ultra-wide bandgap (UWBG) semiconductors is crucial to accelerate the adoption of renewable power sources. This necessitates an UWBG semiconductor that exhibits robust doping with high carrier mobility over a wide range of carrier concentrations. Here we demonstrate that epitaxial thin films of the perovskite oxide NdxSr1–xSnO3(SSO) do exactly this. Nd is used as a donor to successfully modulate the carrier concentration over nearly two orders of magnitude, from 3.7 × 1018 cm–3to 2.0 × 1020 cm–3. Despite being grown on lattice-mismatched substrates and thus having relatively high structural disorder, SSO films exhibited the highest room-temperature mobility, ~70 cm2 V–1 s–1, among all known UWBG semiconductors in the range of carrier concentrations studied. The phonon-limited mobility is calculated from first principles and supplemented with a model to treat ionized impurity and Kondo scattering. This produces excellent agreement with experiment over a wide range of temperatures and carrier concentrations, and predicts the room-temperature phonon-limited mobility to be 76–99 cm2 V–1 s–1depending on carrier concentration. This work establishes a perovskite oxide as an emerging UWBG semiconductor candidate with potential for applications in power electronics
Truttmann, Tristan K., et al. "Combined experimental-theoretical study of electron mobility-limiting mechanisms in SrSnO<sub>3</sub>." Communications Physics, vol. 4, no. 1, Nov. 2021. https://doi.org/10.1038/s42005-021-00742-w
Truttmann, Tristan K., Zhou, Jin-Jian, Lu, I-Te, Rajapitamahuni, Anil Kumar, Liu, Fengdeng, Mates, Thomas E., Bernardi, Marco, & Jalan, Bharat (2021). Combined experimental-theoretical study of electron mobility-limiting mechanisms in SrSnO<sub>3</sub>. Communications Physics, 4(1). https://doi.org/10.1038/s42005-021-00742-w
Truttmann, Tristan K., Zhou, Jin-Jian, Lu, I-Te, et al., "Combined experimental-theoretical study of electron mobility-limiting mechanisms in SrSnO<sub>3</sub>," Communications Physics 4, no. 1 (2021), https://doi.org/10.1038/s42005-021-00742-w
@article{osti_1978731,
author = {Truttmann, Tristan K. and Zhou, Jin-Jian and Lu, I-Te and Rajapitamahuni, Anil Kumar and Liu, Fengdeng and Mates, Thomas E. and Bernardi, Marco and Jalan, Bharat},
title = {Combined experimental-theoretical study of electron mobility-limiting mechanisms in SrSnO<sub>3</sub>},
annote = {The discovery and development of ultra-wide bandgap (UWBG) semiconductors is crucial to accelerate the adoption of renewable power sources. This necessitates an UWBG semiconductor that exhibits robust doping with high carrier mobility over a wide range of carrier concentrations. Here we demonstrate that epitaxial thin films of the perovskite oxide NdxSr1–xSnO3(SSO) do exactly this. Nd is used as a donor to successfully modulate the carrier concentration over nearly two orders of magnitude, from 3.7 × 1018 cm–3to 2.0 × 1020 cm–3. Despite being grown on lattice-mismatched substrates and thus having relatively high structural disorder, SSO films exhibited the highest room-temperature mobility, ~70 cm2 V–1 s–1, among all known UWBG semiconductors in the range of carrier concentrations studied. The phonon-limited mobility is calculated from first principles and supplemented with a model to treat ionized impurity and Kondo scattering. This produces excellent agreement with experiment over a wide range of temperatures and carrier concentrations, and predicts the room-temperature phonon-limited mobility to be 76–99 cm2 V–1 s–1depending on carrier concentration. This work establishes a perovskite oxide as an emerging UWBG semiconductor candidate with potential for applications in power electronics},
doi = {10.1038/s42005-021-00742-w},
url = {https://www.osti.gov/biblio/1978731},
journal = {Communications Physics},
issn = {ISSN 2399-3650},
number = {1},
volume = {4},
place = {United States},
publisher = {Springer Nature},
year = {2021},
month = {11}}