Study of Photocarriers Lifetime Distribution in a-Si:H via Magneto-photoconductivity and Magneto-Photoluminescence

McLaughlin, Ryan; Pan, Xin; Sun, Dali; Kwon, Ohyun; Vardeny, Zeev Valy

doi:10.1002/adom.202200499

Study of Photocarriers Lifetime Distribution in a-Si:H via Magneto-photoconductivity and Magneto-Photoluminescence

Journal Article · Sun May 29 00:00:00 EDT 2022 · Advanced Optical Materials

DOI:https://doi.org/10.1002/adom.202200499· OSTI ID:1976233

McLaughlin, Ryan ^[1]; Pan, Xin ^[2]; Sun, Dali ^[3]; Kwon, Ohyun ^[4]; ^[2]

University of Utah, Salt Lake City, UT (United States); OSTI
University of Utah, Salt Lake City, UT (United States)
University of Utah, Salt Lake City, UT (United States); North Carolina State University, Raleigh, NC (United States)
Samsung Advanced Institute of Technology Samsung Electronics Co., Ltd., Suwon (Korea, Republic of)

In this report the magneto-photoluminescence (MPL) of localized photocarriers and magneto-photoconductivity (MPC) of delocalized photocarriers in amorphous hydrogenated silicon (a-Si:H) films and devices, respectively, are investigated. Both responses are caused by mixing of spin sublevels in the photogenerated electron–hole (e–h) pairs that alters their recombination and dissociation rates. The spin mixing occurs by a combination of hyperfine interaction (HFI) between spin ½ photocarriers and neighboring ²⁹Si and ¹H nuclei, and the Δg mechanism which originates from a difference in the Landé g-factors of electrons and holes. The existing disorder in a-Si:H films leads to dispersive field response that is described by a unique dispersive parameter α < 1, from which the e–h lifetime distribution, g(τ) is obtained. The mean e–h lifetime is found to be ≈12 ns for the high-energy, relatively delocalized photocarriers generating the photocurrent, as compared to ≈200 ps for the lower energy, trapped e–h pairs which yield photoluminescence. The MPL(B) and MPC(B) responses in a-Si:H subjected to prolonged illumination that causes Staebler–Wronski type degradation, and subsequent annealing are studied. The illumination-induced photocarrier localization that enhances the HFI component is found, which dramatically decreases upon annealing; this method can assess optoelectronic device degradation.

View Accepted Manuscript (DOE)

Research Organization:: University of Utah, Salt Lake City, UT (United States)

Sponsoring Organization:: SAMSUNG Global Research Outreach (GRO); USDOE; USDOE Office of Science (SC)

Grant/Contract Number:: SC0014579

OSTI ID:: 1976233

Alternate ID(s):: OSTI ID: 1996281

Journal Information:: Advanced Optical Materials, Journal Name: Advanced Optical Materials Journal Issue: 16 Vol. 10; ISSN 2195-1071

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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