Optical, electrical, and EPR studies of polycrystalline Al:Cr:ZnSe gain elements
Transition metal-doped II-VI (TM:II-VI) chalcogenides are well-known laser materials for optically pumped middle-infrared lasers. Cr:ZnSe is a key representative of this class of transition metal doped II-VI gain media and is arguably considered the material of choice for optically pumped middle-infrared lasers. In addition to effective mid-IR lasing under optical excitation, these crystals, being wide-band semiconductors, hold the potential for direct electrical excitation. One way to form n-type conductivity in ZnSe crystals is by annealing them in a melt of Zn-Al alloy. However, this annealing of Cr:ZnSe crystals results in their purification and transfer of chromium to the melt of Zn-Al alloy. In this article, we report on optimizing the doping technique for providing n-type conductivity in Al:Cr:ZnSe crystals while preserving the chromium concentration. Al:Cr:ZnSe samples with resistivities ranging from 10.8 to 992 Ω-cm were fabricated. While the 2 + valence state of Cr is typically dominant in Cr:ZnSe, both Cr 2+ and Cr + were detected in Al:Cr:ZnSe samples. The maximum level of Cr + concentration was measured to be 4 × 10 18 cm -3 .
- Research Organization:
- Univ. of Alabama, Birmingham, AL (United States)
- Sponsoring Organization:
- National Institutes of Health (NIH); USDOE; USDOE Office of Science (SC)
- Grant/Contract Number:
- SC0018378
- OSTI ID:
- 1972016
- Alternate ID(s):
- OSTI ID: 2420775
- Journal Information:
- Optical Materials Express, Journal Name: Optical Materials Express Journal Issue: 5 Vol. 13; ISSN 2159-3930
- Publisher:
- Optical Society of AmericaCopyright Statement
- Country of Publication:
- United States
- Language:
- English