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Cross-section of electrical impact excitation in bulk n-type monocrystalline Al:Cr:ZnSe

Journal Article · · Optical Materials Express
DOI:https://doi.org/10.1364/OME.402399· OSTI ID:1647408

Middle-infrared luminescence of bulk Al:Cr:ZnSe crystal under direct electrical excitation of Cr 2+ , 5 E− 5 T 2 transition, is reported. Effective cross-section of electrical excitation was estimated based on comparative luminescence measurements under electrical and optical (1560 nm) excitations. Calculation of the threshold current density for lasing under electrical excitation of this material was also performed.

Research Organization:
Univ. of Alabama, Birmingham, AL (United States)
Sponsoring Organization:
USDOE; USDOE Office of Science (SC)
Grant/Contract Number:
SC0018378
OSTI ID:
1647408
Alternate ID(s):
OSTI ID: 1803385
Journal Information:
Optical Materials Express, Journal Name: Optical Materials Express Journal Issue: 9 Vol. 10; ISSN 2159-3930
Publisher:
Optical Society of AmericaCopyright Statement
Country of Publication:
United States
Language:
English

References (25)

Progress in Cr 2+ and Fe 2+ doped mid-IR laser materials journal January 2010
Continuous-wave tunable Cr2+:ZnS laser journal April 2002
Reversible conductivity control and quantitative identification of compensating defects in ZnSe bulk crystals journal June 2000
Preparation conditions of chromium doped ZnSe and their infrared luminescence properties journal May 2001
Al diffused conductive ZnSe substrates grown by physical vapor transport method journal July 2001
En route to electrically pumped broadly tunable middle infrared lasers based on transition metal doped II–VI semiconductors journal July 2007
Room temperature continuous operation of blue-green laser diodes journal January 1993
Narrow‐band electroluminescence at 3.5 μm from impact excitation and ionization of Fe 2+ ions in InP journal March 1996
Diffusion of Aluminum in the ZnSe–ZnTe System journal April 1970
Mechanism of formation of Ohmic contacts to ZnSe, ZnS, and mixed crystals ZnS X Se 1− X journal October 1974
Purification of Ii–Vi Compounds by Solvent Extraction journal November 1962
Interaction of intrinsic defects with impurities in Al doped ZnSe single crystals journal March 2007
Luminescence in highly conductive n ‐type ZnSe journal August 1975
Free‐carrier absorption of n ‐type ZnSe : Al journal May 1977
Electrically enhanced infrared photoluminescence in Cr:ZnSe journal May 2010
Generation of near-infrared light pulses from ZnS:Cr under laser-enhanced cathode-beam excitation journal September 1995
Noise-reduced and anisotropy-enhanced Eden and screened-growth models journal July 1988
Progress in Mid-IR Lasers Based on Cr and Fe-Doped II–VI Chalcogenides journal January 2015
Frontiers of Mid-IR Lasers Based on Transition Metal Doped Chalcogenides journal September 2018
Spectroscopic characterization of Cr 2+ ions in ZnSe/ZnS crystals under visible excitation conference March 2015
Middle-infrared electroluminescence of n-type Cr-doped ZnSe crystals conference February 2006
Cathodoluminescence Study on Diffusion Coefficients of Al, Ga and In in ZnSe journal October 1986
Room-temperature electroluminescence in the mid-infrared (2-3 μm) from bulk chromium-doped ZnSe journal January 2006
Enhancement of Cr and Fe diffusion in ZnSe/S laser crystals via annealing in vapors of Zn and hot isostatic pressing journal December 2016
Stimulated emission of Cr2+ ions in ZnS:Cr thin-film electroluminescent structures journal October 2009

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