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Title: Electrochemical Doping of Halide Perovskites by Noble Metal Interstitial Cations

Journal Article · · Advanced Materials
ORCiD logo [1];  [2]; ORCiD logo [3]; ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [4];  [4]; ORCiD logo [4]; ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [5]; ORCiD logo [2]; ORCiD logo [6]
  1. National Renewable Energy Laboratory Golden CO 80401 USA
  2. Department of Molecular Chemistry and Materials Science Weizmann Institute of Science Rehovoth 76100 Israel
  3. Department of Electrical Engineering Princeton University Princeton NJ 08544 USA
  4. Department of Electrical Engineering The Pennsylvania State University University Park PA 16802 USA
  5. National Renewable Energy Laboratory Golden CO 80401 USA, Department of Physics University of Colorado Boulder Boulder CO 80309 USA, Renewable and Sustainable Energy Institute University of Colorado Boulder Boulder CO 80309 USA
  6. Department of Electrical Engineering Princeton University Princeton NJ 08544 USA, Andlinger Center for Energy and the Environment Princeton University Princeton NJ 08544 USA

Abstract Metal halide perovskites are an attractive class of semiconductors, but it has proven difficult to control their electronic doping by conventional strategies due to screening and compensation by mobile ions or ionic defects. Noble‐metal interstitials represent an under‐studied class of extrinsic defects that plausibly influence many perovskite‐based devices. In this work, doping of metal halide perovskites is studied by electrochemically formed Au + interstitial ions, combining experimental data on devices with a computational analysis of Au + interstitial defects based on density functional theory (DFT). Analysis suggests that Au + cations can be easily formed and migrate through the perovskite bulk via the same sites as iodine interstitials (I i + ). However, whereas I i + compensates n‐type doping by electron capture, the noble‐metal interstitials act as quasi‐stable n‐dopants. Experimentally, voltage‐dependent, dynamic doping by current density–time ( J–t ), electrochemical impedance, and photoluminescence measurements are characterized. These results provide deeper insight into the potential beneficial and detrimental impacts of metal electrode reactions on long‐term performance of perovskite photovoltaic and light‐emitting diodes, as well as offer an alternative doping explanation for the valence switching mechanism of halide‐perovskite‐based neuromorphic and memristive devices.

Research Organization:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office; USDOE Office of Science (SC), Basic Energy Sciences (BES); US Department of the Navy, Office of Naval Research (ONR); Defense Advanced Research Projects Agency (DARPA); Minerva Centre for Self-Repairing Systems for Energy & Sustainability
Grant/Contract Number:
DE‐AC36‐08GO28308; AC36-08GO28308; N00014-21-1-2767; NN66001-20-1-4052
OSTI ID:
1983474
Alternate ID(s):
OSTI ID: 1971886; OSTI ID: 1983475
Report Number(s):
NREL/JA-5900-83484; 2302206
Journal Information:
Advanced Materials, Journal Name: Advanced Materials Vol. 35 Journal Issue: 29; ISSN 0935-9648
Publisher:
Wiley Blackwell (John Wiley & Sons)Copyright Statement
Country of Publication:
Germany
Language:
English

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