Iodine Electrochemistry Dictates Voltage‐Induced Halide Segregation Thresholds in Mixed‐Halide Perovskite Devices

Xu, Zhaojian; Kerner, Ross A.; Berry, Joseph J.; Rand, Barry P.

doi:10.1002/adfm.202203432

Iodine Electrochemistry Dictates Voltage‐Induced Halide Segregation Thresholds in Mixed‐Halide Perovskite Devices

Journal Article · Fri Jun 17 00:00:00 EDT 2022 · Advanced Functional Materials

DOI:https://doi.org/10.1002/adfm.202203432· OSTI ID:1873036

^[1]; ^[2]; Berry, Joseph J. ^[3]; ^[4]

Department of Electrical and Computer Engineering Princeton University Princeton NJ 08544 USA
National Renewable Energy Laboratory Golden CO 80401 USA
National Renewable Energy Laboratory Golden CO 80401 USA, Renewable and Sustainable Energy Institute University of Colorado Boulder Boulder CO 80309 USA, Department of Physics University of Colorado Boulder Boulder CO 80309 USA
Department of Electrical and Computer Engineering Princeton University Princeton NJ 08544 USA, Andlinger Center for Energy and the Environment Princeton University Princeton NJ 08544 USA

Abstract

Owing to straightforward stoichiometry–bandgap tunability, mixed‐halide perovskites are ideal for many optoelectronic devices. However, unwanted halide segregation under operational conditions, including light illumination and voltage bias, restricts practical use. Additionally, the origin of voltage‐induced halide segregation is still unclear. Herein, a systematic voltage threshold study in mixed bromide/iodide perovskite devices is performed and leads to observation of three distinct voltage thresholds corresponding to the doping of the hole transport material (0.7 ± 0.1 V), halide segregation (0.95 ± 0.05 V), and degradation (1.15 ± 0.05 V) for an optically stable mixed‐halide perovskite composition with a low bromide content (10%). These empirical threshold voltages are minimally affected by composition until very Br‐rich compositions, which reveals the dominant role of iodide/triiodide/iodine electrochemistry in voltage‐induced Br/I phase separation and transport layer doping reactions in halide perovskite devices.

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Research Organization:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Organization:: National Science Foundation (NSF); U.S. Department of Defense (DOD), Department of the Navy, Office of Naval Research; USDOE; USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office

Grant/Contract Number:: AC36-08GO28308

OSTI ID:: 1873036

Alternate ID(s):: OSTI ID: 1873037
OSTI ID: 1877359

Report Number(s):: NREL/JA-5900-82091; 2203432

Journal Information:: Advanced Functional Materials, Journal Name: Advanced Functional Materials Journal Issue: 33 Vol. 32; ISSN 1616-301X

Publisher:: Wiley Blackwell (John Wiley & Sons)Copyright Statement

Country of Publication:: Germany

Language:: English

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